NCP5901BDR2G

Current - Peak Output (Source, Sink):	--
Base Part Number:	NCP5901
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	16ns, 11ns
High Side Voltage - Max (Bootstrap):	35V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.7V, 3.4V
Voltage - Supply:	4.5 V ~ 13.2 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Synchronous
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PMIC - Gate Drivers: NCP5901BDR2G Application Field and Working Principle

PMIC (Power Management Integrated Circuits) play an important role in power supply and battery management, allowing efficient data transmission and power consumption management. Among PMIC’s components, gate drivers are notably important in enabling the on/off phase of MOSFET transistors.The NCP5901BDR2G is a PMIC – gate driver developed by ON Semiconductor. This product is designed to drive FET transistors used in various power management applications. It also has advanced features, such as synchronous PWM control, dual-side TOPSwitch protection, over temperature protection and output short-circuit protection, that make it suitable for managing complex power management tasks.This document will provide an overview of the application field of the NCP5901BDR2G and an explanation of its working principle.

Application Field

The NCP5901BDR2G can be used in a wide range of applications, including Power-over-Ethernet (PoE) devices, high-current applications, as well as power systems that require precise voltage and current control.It can be used as an active rectifier in laptop power supplies, replacing the traditional Schottky diodes to enable higher efficiency, such as with ultra-compact power supplies. It can also be used in energy-efficient lighting systems and other power applications, such as DC-DC converters.In addition, the NCP5901BDR2G can be used in non-electrical applications, such as liquid crystal displays, where its voltage and current control features can be used to optimize image quality and contrast.

Working Principle

The NCP5901BDR2G works by switching a P-channel power MOSFET (PMOS) transistor on and off in response to a control signal. This device is so-called “synchronous” because it has two main components – a high-side MOSFET and a low-side MOSFET – which act in tandem to toggle the PMOS.In order to control the switching of the PMOS, the NCP5901BDR2G utilizes a pulse width modulation (PWM) technique which varies the on/off duration of the MOSFETs. This ensures that the voltage and current losses due to the PMOS switching remain low, enabling high efficiency in power applications.The NCP5901BDR2G also utilizes an onboard protection system, which monitors the temperature, voltage, and current levels of the PMOS transistor. This system can be used to reduce the chance of component damage and ensure system reliability.In summary, the NCP5901BDR2G is designed to provide highly efficient power control through synchronous PWM control, while also providing protection features to reduce the risk of component damage. The NCP5901BDR2G can be used in a wide range of power management applications, from laptop power supplies to LCD displays, making it an ideal solution for many power management tasks.

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