NE25139-T1-U73

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NE25139-T1-U73 is a high-performance radio frequency field effect transistor (RF FET) designed for use in a wide range of radio frequency (RF) and microwave applications. This N-channel MOSFET is manufactured by Toshiba Semiconductor Co., LTD. With superior electrical parameters and thermal characteristics, the NE25139-T1-U73 provides outstanding performance in varying conditions. This makes it a great choice for use in applications such as switch mode power amplifiers, voltage controlled oscillators, microwave power transistor amplifiers, and RF attenuators.

The NE25139-T1-U73 is a high frequency, high power, N-channel MOSFET. It features excellent linearity and low distortion levels, which allow it to perform well in high frequency, radio frequency, and microwave applications. Its superior power handling capacity also makes it suitable for use in high power amplifier designs. In addition, its low thermal resistance helps to minimize losses thereby helping to improve efficiency.

The working principle of a MOSFET is based on the operation of a field effect transistor (FET). MOSFETs operate on a principle called the electrostatic induction effect (EI), where a built-in electric field is used to control the current flow through the transistor. This electric field is established by a voltage applied to the gate of the MOSFET, which causes a conductive channel to be established between the source and drain of the transistor. This allows current to flow through the device, and can be used to control the flow of power or to amplify a signal.

In order to ensure performance, special attention must be paid to the thermal design of the NE25139-T1-U73. Because of its high power handling capacity, the device is exposed to high levels of thermal stress which can cause distortion, limit power output, and reduce the life of the device. The NE25139-T1-U73 is not intended for use in applications where the temperature exceeds 150 degrees Celsius. It must also be used in accordance with the manufacturer’s recommended operating conditions.

The NE25139-T1-U73 is a reliable and cost-effective solution for a wide range of RF and microwave applications. It features an exceptionally low distortion level and an extremely high power handling capacity, making it suitable for both high performance applications as well as lower power designs. Its outstanding electrical parameters and thermal characteristics make it a great choice for a wide range of applications, and its adherance to the manufacturer’s recommended operating conditions ensures reliable and long lasting performance.

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