NE25139-T1 Discrete Semiconductor Products

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NE25139-T1 is an N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed specifically for RF (Radio Frequency) applications in the product range from 5 kHz to hundreds of MHz. It is a three-terminal device composed of a source, a drain and a gate. It is constructed of a vertical MOSFET structure with a sandwiched gate oxide that provides a high speed of switching, excellent avalanche capability and low threshold voltage.

The NE25139-T1 is used for a wide range of applications, including signal amplification, signal switching, video amplifiers, RF amplifiers, and many other high-frequency applications up to several hundred MHz. The device has low RDS(ON) and constant gfs over the entire RF signal range, which makes it ideal for use at low and high power levels. It also features low parasitic capacitance, which minimizes distortion. Additionally, it has a low threshold voltage, which enables it to operate with very low drain-source voltages.

The NE25139-T1 works on the principle of a depletion-mode MOSFET. Its three terminals are the source, gate and drain. A voltage applied to the gate controls the flow of current through the device, and changes in the gate voltage cause the drain current to vary with the gate voltage. When a voltage higher than the threshold voltage is applied to the gate, the channel current is established and the device turns ON. The NE25139-T1 can be operated in two distinct modes: the straight-through (or polarization) mode and the break-through mode.

In the straight-through mode (or polarization mode), the gate voltage is used to control the current flowing through the device by turning it OFF or ON. In break-through mode, the gate voltage is used to control the breakdown characteristics of the device. The breakdown characteristics of the device depend on the gate voltage, and can be adjusted to provide varying levels of current flow in the device. This mode is used in applications where the gate voltage needs to be adjusted to provide the desired current flow.

The NE25139-T1 is an integrated device that has low input capacitance, low gate charge, and low on-resistance which makes it suitable for use in high gain and high frequency applications. It is an ideal device for use in radio-frequency (RF) communication systems, RF amplifiers, and other RF applications where high speed, high gain, and low noise are desired. Additionally, it has excellent RF isolation characteristics, making it ideal for applications requiring low leakage currents and minimal cross-talk between circuits.

The NE25139-T1 provides a low-cost solution for high performance RF applications. It is available in a wide range of packages, including SOT23, DIP and surface mount. The device is also available in various configurations, such as single, dual, and three-channel. The device has a wide operating temperature range of -40°C to +125°C, making it suitable for use in a variety of applications. The NE25139-T1 is an ideal device for use in high frequency, high power applications where low input capacitance and low on-resistance are desired.

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