NPT1004D Allicdata Electronics
Allicdata Part #:

1465-1413-ND

Manufacturer Part#:

NPT1004D

Price: $ 36.29
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: HEMT N-CH 28V 45W DC-4GHZ 8SOIC
More Detail: RF Mosfet HEMT 28V 350mA 0Hz ~ 4GHz 13dB 37dBm 8-S...
DataSheet: NPT1004D datasheetNPT1004D Datasheet/PDF
Quantity: 1000
1 +: $ 32.98680
10 +: $ 31.04640
25 +: $ 29.10600
100 +: $ 27.74770
Stock 1000Can Ship Immediately
$ 36.29
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: 9.5A
Noise Figure: --
Current - Test: 350mA
Power - Output: 37dBm
Voltage - Rated: 100V
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOP2
Description

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NPT1004D is a N-channel enhancement mode left-hand lowside MOSFET that can be used in various fields and applications. It has very low on-state resistance. It is made in die-fast, surface mounted package with power rail current limiters and integrated ESD protection and it has an integrated CMOS switch. It also contains a double N-channel MOSFET and it is capable of operating up to a frequency of 10GHz. NPT1004D is also used in fast switching applications and power supplies.

The main application fields of NPT1004D are radio frequency transmission, radio frequency switching and radio frequency converters. It is mostly used in communication systems and data processing equipment which require high bandwidth, high speed and low jitter. It is also suitable for high speed switching applications like RF systems, power supplies, converters and motor control.

NPT1004D works in an enhancement mode, meaning that it works when voltage is applied to its gate. This type of MOSFET is also called a “right side” MOSFET because its gate is located on the right side of its body. The gate voltage is the voltage applied through the gate to the Si substrate, and it is used to control the current flow through the MOSFET. The higher the gate voltage, the higher the conduction current across the MOSFET.

NPT1004D has a low on-state resistance, meaning that it is capable of allowing more current to flow through its channel as compared to other types of MOSFETs. It also has an integrated ESD protection that makes it suitable for use in high frequency applications. Furthermore, it is capable of operating up to a frequency of 10GHz, making it very efficient for RF applications.

NPT1004D is also capable of handling very high power, making it suitable for use in applications requiring high voltage and high-current operations. Moreover, it has a fast switching speed, allowing it to be used in applications that require fast switching times. In addition, its double N-channel MOSFET design ensures high frequency stability and low noise operation.

Overall, NPT1004D is a great device for use in various applications requiring a high-performance MOSFET. It can be used in several application fields, such as radio frequency transmission, radio frequency switching, and radio frequency converters. Furthermore, its low on-state resistance, high frequency stability and fast switching speed ensures that it is an efficient and reliable component for use in various applications.

The specific data is subject to PDF, and the above content is for reference

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