NPT1007B Allicdata Electronics
Allicdata Part #:

1465-1772-ND

Manufacturer Part#:

NPT1007B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: TRANSISTOR GAN DC-1200MHZ 200W
More Detail: RF Mosfet HEMT 28V 1.4A 900MHz 18.3dB 53dBm
DataSheet: NPT1007B datasheetNPT1007B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: HEMT
Frequency: 900MHz
Gain: 18.3dB
Voltage - Test: 28V
Current Rating: 20.5A
Noise Figure: --
Current - Test: 1.4A
Power - Output: 53dBm
Voltage - Rated: 100V
Package / Case: --
Supplier Device Package: --
Description

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NPT1007B is an RF type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is known to be simpler and more economical compared to its bipolar counterpart. Since its introduction, NPT1007B has become an indispensable tool in many RF applications, providing high efficiency and dynamic performance. This article will discuss the application fields and the working principle of NPT1007B.

Application Fields of NPT1007B

The wide application range of NPT1007B makes this type of transistor desirable and even indispensable in many different fields. It is a very common device in the field of telecommunications, digital television and audio, surface- and space-based radar systems, and digital cameras. Due to its high linear gain and wide RF bandwidth, NPT1007B is mainly used in low noise amplifier, power amplifier, amplifying stages of circuits, and active filters. Additionally, NPT1007B is also extensively used in professional audio systems and signals as it can provide an ample amount of power with negligible distortion.

Working Principle of NPT1007B

The working principle behind any MOSFET transistor is the same, but the specific technologies deployed within the device influence its capabilities and features. NPT1007B is an example of a modern MOSFET technology that takes advantage of the metal-oxide layers on the device surface in order to gain notable amplification performance. As far as the operation of NPT1007B is concerned, a gate voltage is applied to the transistor which allows electrons to flow from the source to the drain of the device. This process is known as ‘inversion’ and it is responsible for creating the charge carriers that are used to amplify a signal. As can be seen, the working principle behind NPT1007B is relatively simple, but its profound results have made it an essential tool in many different fields.

Conclusion

NPT1007B is a MOSFET type of transistor that is capable of providing excellent amplification performance and dynamic operation at an economical price. Its application range is widely spread, covering fields such as telecommunications, digital television, audio, radar systems and digital cameras. Its working principle is simple, yet efficient – a gate voltage is applied which allows electrons to flow from source to drain, resulting in a significant signal amplification.

The specific data is subject to PDF, and the above content is for reference

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