NPT2010

N-channel enhancement mode power Mosfet, also known as NPT2010, is a type of field-effect transistor (FET) that is widely used in radio-frequency (RF) applications thanks to its high input impedance, low capacitance, and low insertion losses. This type of transistor is commonly used in RF circuitry because of its excellent linearity and wide-band operation.The NPT2010 is a type of FET that operates using an enhancement-mode structure. This means that the transistor is activated when a positive gate–source voltage is applied. The gate-source voltage activates the transistor by “pulling” electrons from the channel\'s negative substrate, through the gate, into the positive substrate. This increases the conductivity of the channel and allows current to flow between the source and drain.The NPT2010 exhibits excellent linearity and wide-band operation because of its well-defined “Punch Through Control” (PTC) characteristics. PTC provides excellent linearity and wide-band operation by controlling the subthreshold conduction of the channel. PTC also reduces the channel-width modulation and improves the switch-off characteristics of the transistor, resulting in improved power ratings.When operating at high frequencies, it is important to note that the NPT2010 is susceptible to parasitics, including gate-source and gate-drain capacitances. In order to reduce these parasitics, the transistor must be operated at higher gate voltages and with an appropriate impedance matching circuit.One of the advantages of using the NPT2010 is that it does not require complex biasing networks. The transistor operates with a single gate voltage and with a minimum of bias currents. This simplifies design, reduces component count, and helps to optimize power dissipation.Overall, the NPT2010 is an excellent transistor for RF applications. It offers excellent performance, low cost, and is easy to use. Its excellent PTC characteristics and low parasitics provide excellent linearity and wide-band operation, while its low component count and simple biasing network make it easy to integrate into circuitry.

NPT25015D	M/A-Com Tech...	35.12 $	70	HEMT N-CH 28V 23W DC-3GHZ...
NPT2021	M/A-Com Tech...	68.31 $	1000	HEMT N-CH 48V 50W DC-2.2G...
NPT2010	M/A-Com Tech...	170.32 $	1000	HEMT N-CH 48V 100W DC-2.2...
NPT2019	M/A-Com Tech...	0.0 $	1000	FET RF 160V 6GHZ 14DFNRF ...
NPT2022	M/A-Com Tech...	0.0 $	1000	HEMT N-CH 48V 100W DC-2GH...
NPT2021-SMBPPR	M/A-Com Tech...	0.69 $	4	EVAL BOARD FOR NPT2021
NPT2022-SMBPPR	M/A-Com Tech...	0.69 $	3	EVAL BOARD FOR NPT2022