NRVB130LSFT1G Discrete Semiconductor Products |
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Allicdata Part #: | NRVB130LSFT1GOSTR-ND |
Manufacturer Part#: |
NRVB130LSFT1G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 30V 1A SOD123FL |
More Detail: | Diode Schottky 30V 1A Surface Mount SOD-123FL |
DataSheet: | NRVB130LSFT1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09223 |
6000 +: | $ 0.08664 |
15000 +: | $ 0.08105 |
30000 +: | $ 0.07453 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 380mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | SOD-123FL |
Operating Temperature - Junction: | -55°C ~ 125°C |
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NRVB130LSFT1G Application Field and Working Principle
NRVB130LSFT1G is part of the "Rectifiers - Single" diode family,and is a type of fast switching diode made out of glass passivated silicon chips. This diode is widely used in power supplies, rectifiers, chargers and converters where a fast switching transition is necessary. It is also used in low power switchmode converters and can be found in telecommunication devices.
A diode is a semiconductor device means for controlling the flow of electric current. It consists of a single PN junction, in which the N-type and the P-type regions of semiconductor material are in contact with each other. The diode is designed such that it allows current to flow in only one direction, from the N-region to the P-region. This is also known as unidirectional current flow.
The NRVB130LSFT1G fast switching diode works in exactly this manner. The PN junction in the diode has a higher conductivity in one direction than the other, allowing current to flow in one direction only. The higher resistance in the other direction means that current won\'t flow in that direction, making the diode ideally suited for rectifying and switching applications.
When the diode is in the forward-biased state, its PN junction forms a low-resistance path for conduction, allowing current to flow. However, as the voltage applied to the diode increases, the current flow becomes limited and the diode enters a reverse-biased state, resulting in a high-resistance path for conduction and the blocking of current flow. This is what is known as the "Clamping" effect.
The NRVB130LSFT1G fast switching diode has an extremely short recovery time, which means it can switch from its forward-biased to reverse-biased state and back again in a fraction of a second. This makes it ideal for applications requiring fast switching operations, such as power supplies, rectifiers and converters.
Besides, the NRVB130LSFT1G diode also provides a high surge current capability, allowing it to withstand transient currents that occur in switchmode and power conversion circuits. This makes it highly suitable for applications such as power supplies, chargers and other power conversion circuits.
In conclusion, the NRVB130LSFT1G fast switching diode is an ideal choice for power conversion and switching applications, due to its high surge current capability and fast recovery times. This makes it well suited for use in power supplies, rectifiers, converters and other switchmode circuits.
The specific data is subject to PDF, and the above content is for reference
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