NSCT2907ALT1G Allicdata Electronics
Allicdata Part #:

NSCT2907ALT1G-ND

Manufacturer Part#:

NSCT2907ALT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 0.6A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 225m...
DataSheet: NSCT2907ALT1G datasheetNSCT2907ALT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 225mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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NSCT2907ALT1G application field and working principle

The NSCT2907ALT1G is a Bi-polar Junction Transistor (BJT) categorized as a single type. This small, 1.65 x 1.65 mm2 package was designed with a low-emitter mode architecture to provide low power dissipation and high gain performance, ideal for applications such as unipolar motor control, smart home, AC system motor control and automotive motor control.

Application Field

The NSCT2907ALT1G is ideal for linear and switching mode applications. It can be used in unipolar motor control, allowing for simple designs in a small package. It is also used in automotive motor control, smart home and AC system motor control, allowing for a various range of applications. This transistor is capable of withstanding voltages up to 150 volts as well as operation temperatures ranging from -25 degrees celsius to 150 degrees celsius allowing for a wide range of application fields.

Working Principle

As a BJT, the NSCT2907ALT1G works through the use of electrical current. It consists of three layers of semiconductor material; a base, collector and emitter. An electrical current is given to the base, which creates a “depletion region” around the base. This causes the collector current to flow, which in turn passes through the emitter to ground. Through this, the transistor is able to switch on and off greatly reducing power dissipation and providing a high gain performance.

The NSCT2907ALT1G was specifically designed with a low-emitter mode architecture. In this architecture, the emitter will be at ground potential even when the transistor is switched on. This allows for reduced power consumption, higher gain and higher voltage usage.

Advantages

The NSCT2907ALT1G offers various advantages. It comes in a small package and has a low-emitter mode architecture allowing for low-power consumption and high gain performance. It is also able to withstand voltages up to 150 V and operate in temperatures from -25°C to 150°C, making it ideal for a wide range of applications. Lastly, it works in both linear and switching mode making it ideal for any application.

Conclusion

The NSCT2907ALT1G is a single Bi-Polar Junction Transistor (BJT) ideal for applications such as unipolar motor control, smart home, AC system motor control and automotive motor control. It comes in a small package and has a low-emitter mode architecture allowing for low-power consumption and high gain performance. The NSCT2907ALT1G is also able to withstand voltages up to 150 V and operate in temperatures from -25°C to 150°C, making it ideal for various applications. Lastly, it works in both linear and switching mode making it an ideal transistor for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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