NSCT3906LT3G Allicdata Electronics
Allicdata Part #:

NSCT3906LT3G-ND

Manufacturer Part#:

NSCT3906LT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.2A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 225m...
DataSheet: NSCT3906LT3G datasheetNSCT3906LT3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 225mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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NSCT3906LT3G is a NPN silicon surface-mount transistors from ON Semiconductor which are specifically designed for general purpose switching and amplifier applications.The transistor family is internally compensated with a range of operating temperature from -55 °C to 150 °C.

The NSCT3906LT3G transistors are available in a single package which provides excellent isolation between the collector and emitter pins. The transistors provide a high current gain and high collector-emitter breakdown voltage which makes them suitable for a variety of high speed switching and gain application.

The NSCT3906LT3G transistor is a bipolar NPN type transistor which exhibits a high level of current gain even at low collector current. It is capable of maximizing the power efficiency in a wide range of bipolar transistor circuits. The high voltage and low saturation voltage features of the transistor make it suitable for use in a variety of power amplifier applications.

NSCT3906LT3G transistors are used in a host of different applications including RF power amplifiers, motor control applications, audio amplifiers, power supplies, and automotive applications. They are highly versatile and can be combined with many other components for a wide range of designs. The transistors can also be used for voltage regulation, DC-DC converters, power supply design, and signal conditioning.

The working principle of a transistor can be explained in terms of the operation of its three terminals - the collector, base, and emitter. When a voltage is applied to the base of the transistor, it causes the base current to flow, which in turn causes the current to flow from the collector to the emitter. The current is regulated by the resistance of the collector-base junction. The collector-emitter voltage is controlled by the current flow in the emitter-base junction of the transistor.

The current gain of an NSCT3906LT3G transistor is primarily determined by the base-emitter voltage. The voltage applied between the base and emitter of the transistor increases the current gain by reducing the collector-base reverse bias. The gain of the transistor depends on the relative ratio between the base-emitter voltage and the collector-base reverse bias.

The NSCT3906LT3G is a highly efficient transistor, which can be used for a wide range of applications where high gain and current are required. It is a well-suited choice for amplifier and switching applications as it combines a high level of current gain and a wide range of operating temperatures. It is also a low-cost solution which makes it suitable for various consumer electronic applications.

The specific data is subject to PDF, and the above content is for reference

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