NSV12100XV6T1G Allicdata Electronics
Allicdata Part #:

NSV12100XV6T1G-ND

Manufacturer Part#:

NSV12100XV6T1G

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 12V 1A SOT563
More Detail: Bipolar (BJT) Transistor PNP 12V 1A 650mW Surface...
DataSheet: NSV12100XV6T1G datasheetNSV12100XV6T1G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.11617
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 650mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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The NSV12100XV6T1G is a single transistor, specifically a bipolar junction transistor (BJT) that has a number of applications and a working principle that should be understood for effective use in a variety of contexts. This transistor has some unique characteristics that enable it to be used in a wide range of applications, from high-current switching to amplifier circuits, where both large-signal and audio power amplification are possible.

In terms of its application field, the NSV12100XV6T1G is most often used as a high current, high peak power switching device. As a result, it is perfectly suited for DC/DC, AC/DC, and DC/AC power conversion circuits. It can handle up to 6A of current, and is especially useful in situations where extremely low fall times and extremely high speed are desired. Additionally, it is ideal for applications that use Pulse Width Modulation (PWM) to control the duty cycle of a voltage output.

The NSV12100XV6T1G also has excellent performance in the audio range, and can be used in any circuit where audio power amplifiers are needed. It can provide higher gain with lower signal distortion than comparable BJTs, making it ideal for digital and analog audio systems that want to achieve cleaner and precise output. Furthermore, it can handle large-signal amplification when driven into saturation, and can be used in voltage amplifier circuit applications.

In terms of its working principle, the NSV12100XV6T1G is based on two pn junctions. This means that it is capable of amplifying current or voltage depending on how it is used. In its most basic configuration, the transistor acts as a voltage amplifier, with the input signal being applied to the base, and the output appearing at the collector. In this configuration, it acts as an active device that controls the flow of current between the collector and emitter, depending on the current level of the input signal.

Alternatively, it can also be used as a current amplifier, where the input signal is again applied to the base, but the output appears at the emitter. In this configuration, the transistor acts as a current source, with the input signal controlling the current flow between the collector and the emitter. Using this configuration, the NSV12100XV6T1G can be used in any circuit where current amplification is required.

All in all, the NSV12100XV6T1G is an extremely versatile and useful transistor that can be used in a variety of contexts, from high-power switching circuitry to audio power amplification. With its two pn junctions, it can be used as a voltage amplifier for large-signal operations, or as a current amplifier for smaller-signal operations, making it a great choice for a variety of applications. When used correctly, it can provide excellent results in whatever context it is employed.

The specific data is subject to PDF, and the above content is for reference

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