NSV1C200MZ4T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSV1C200MZ4T1GOSTR-ND |
Manufacturer Part#: |
NSV1C200MZ4T1G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 2A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 100V 2A 120MHz 800mW ... |
DataSheet: | NSV1C200MZ4T1G Datasheet/PDF |
Quantity: | 2000 |
1000 +: | $ 0.16328 |
2000 +: | $ 0.14888 |
5000 +: | $ 0.13927 |
10000 +: | $ 0.12967 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 220mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 2V |
Power - Max: | 800mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Bipolar junction transistors (BJTs) are common in electronics and are made up of two p-n junctions with three terminals. The NSV1C200MZ4T1G is a surface-mount, single-transistor device designed to meet the needs of high-frequency analog and digital applications, such as radio frequency (RF) circuits. It is also suitable for use in mobile communications and wireless networks.
The NSV1C200MZ4T1G is designed using a high-reliability oxide-semiconductor process and has good performance in terms of gain, frequency response, and noise characteristics. It has a wide operating voltage range of 0.15 to 1.8 V and an operating current range of 1 to 10 mA. The transistor is also able to operate at high temperatures, up to 150°C.
The working principle of the NSV1C200MZ4T1G is based on the action of the Base-Collector junction. In the ON state, electrons from the base terminal flow to the collector and charge up the collector to the same voltage level as the base. This creates a current path from the base to the collector. The transistor acts as a switch since the current flow is dependant on the base voltage. When the base voltage is low, the transistor is OFF and no current will flow between the collector and emitter. When the base voltage is high, the transistor is ON and there is current flow.
The NSV1C200MZ4T1G is designed to be used in a variety of applications. It can be used in RF signals and high-speed digital logic circuits. It can also be used in low noise amplifiers, high-frequency oscillators, mixers, and amplifiers. Furthermore, it can be used as a switch in LED backlighting, LED drivers, and automotive applications.
In summary, the NSV1C200MZ4T1G is a surface-mount single-transistor device designed to meet the needs of high frequency analog and digital applications. It has a wide operating voltage range and can operate up to 150°C. The transistor works by controlling the current flow by varying the base voltage. It can be used in a wide variety of applications, including RF signals, high-speed digital logic circuits, low noise amplifiers, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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