
NSV1C201MZ4T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSV1C201MZ4T1GOSTR-ND |
Manufacturer Part#: |
NSV1C201MZ4T1G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 2A SOT223-4 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 2A 100MHz 800mW ... |
DataSheet: | ![]() |
Quantity: | 4000 |
1000 +: | $ 0.16328 |
2000 +: | $ 0.14888 |
5000 +: | $ 0.13927 |
10000 +: | $ 0.12967 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 180mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 2V |
Power - Max: | 800mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 (TO-261) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NSV1C201MZ4T1G application field and working principle
NSV1C201MZ4T1G is a Single bipolar junction transistor (BJT). It is a three-terminal amplifier commonly used in circuit applications. The transistor is designed for systems that require low-noise, low-power and fast operation. It is available in a Surface Mount (SMT) package with NPN type and PNP type.
NSV1C201MZ4T1G can be used in various applications due to its wide range of features. It is suitable for both analogue and digital applications such as amplifiers, interfaces, switches, drivers, fast-recovery diodes, logic emitter confined transistors, and low-noise amplifiers. It is also used in radio-frequency applications where high-frequency loading is required.
The working principle of a NSV1C201MZ4T1G is quite simple. It consists of two p-type and one n-type semiconductor layers. These layers are connected together and to the external circuit in series. When a bias voltage is applied to the n-type layers, electrons will flow between the layers. This current is what drives the electronic signal.
The input signal is expelled to the base terminal which induces a small current through the base-emitter junction. This current is then amplified by the collector-emitter junction. The amplified output is expelled from the collector terminal of the transistor.
NSV1C201MZ4T1G has many advantages in applications. It can operate from high to low power consumption and low to high frequency operation. It also provides low-noise operation, which is necessary in many audio applications. Furthermore, it has fast switching times which make it ideal for high-speed digital applications.
NSV1C201MZ4T1G has a wide range of applications in both analog and digital systems. It is used in amplifiers, logic emitter confined transistors, fast-recovery diode, switches, interfaces, drivers, and low-noise amplifiers. It is suitable for radio-frequency applications where high-frequency loading is required. Additionally, it can operate from high to low power consumption and low to high frequency operation.
In conclusion, NSV1C201MZ4T1G is a single bipolar junction transistor (BJT) that offers fast switching times, low noise operation, and low power consumption for a variety of applications. It is suitable for both analog and digital systems and is often used in amplifiers, fast-recovery diodes, interfaces, switches, drivers, and low-noise amplifiers. It is also ideal for radio-frequency applications where high-frequency loading is required.
The specific data is subject to PDF, and the above content is for reference
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