NSV1C200LT1G Allicdata Electronics

NSV1C200LT1G Discrete Semiconductor Products

Allicdata Part #:

NSV1C200LT1GOSTR-ND

Manufacturer Part#:

NSV1C200LT1G

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 2A SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 100V 2A 120MHz 490mW ...
DataSheet: NSV1C200LT1G datasheetNSV1C200LT1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12652
6000 +: $ 0.11836
15000 +: $ 0.11020
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 490mW
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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The NSV1C200LT1G is a high-voltage, fast-switching NPN bipolar junction transistor (BJT). It is designed to efficiently provide a high voltage and high current path when needed. The transistor operates in a wide variety of applications, including power conditioning, high frequency switching, and other power management functions. The device was designed to provide a highly efficient, low-power solution for applications such as Class D audio and other high-voltage, high-current switching and control applications.

Application field

The NSV1C200LT1G is primarily used in switching and Class A/B/C amplifier applications. Due to its high voltage and fast switching characteristics, the device is well suited for trans-impedance amplifier stages, series switching applications, and Class D audio amplifier designs. Additionally, the device can be used in low-noise pre-amplifiers, linear power supplies, DC-DC converters, and various automotive power management applications.

Working principle

NSV1C200LT1G is an NPN BJT that is used to switch high voltages and high current. The transistor a consists of three layers of doped silicon arranged between two metallic contacts: a base, an emitter, and a collector. A large current is allowed to pass between the emitter and the collector when a sufficient voltage is applied to the base. The device is typically operated in either cutoff or saturation modes, based on the magnitude of base voltage. In cutoff mode, very little current flows between the emitter and collector, while in saturation mode, a large amount of current can flow in the device. By controlling the base voltage, a high current and voltage path can be provided when needed.

Summary

The NSV1C200LT1G is a high-voltage, fast-switching NPN bipolar junction transistor. It is designed for a variety of applications, including power conditioning, high frequency switching, and other power management functions. The device is primarily used in switching and Class A/B/C amplifier applications, and can also be used in low-noise pre-amplifiers, linear power supplies, DC-DC converters, and various automotive power management applications. The transistor operates by providing a high voltage and current path when the base voltage controls it to cut off or saturation mode.

The specific data is subject to PDF, and the above content is for reference

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