Allicdata Part #: | NTGD4161PT1G-ND |
Manufacturer Part#: |
NTGD4161PT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 30V 1.5A 6-TSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 1.5A 600mW Sur... |
DataSheet: | NTGD4161PT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 281pF @ 15V |
Power - Max: | 600mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NTGD4161PT1G is a upgraded replacement for the old NTGD3020PT1G and is a low capacitance array fabricated with N-Channel Trench technology. It is designed to provide both overcurrent and overvoltage protection to the systems with high load capacitance. This array is being used in a wide range of applications such as CPU power supplies, digital signal processing, general purpose arrays and PLL circuits.
The NTGD4161PT1G is a device featuring both N-Channel MOSFETs, diodes and capacitors that provide both overcurrent and overvoltage protection. It is designed to deliver both high peak current and high current load to extend the life of the device for longer period of time, which makes it beneficial for various industrial applications. Additionally, it offers excellent thermal stability, low on-state resistance and high frequency switching capability.
NTGD4161PT1G, due to its advanced N-channel MOSH technology provides high-speed switching performance and low switching times. The device also offers high voltage breakdown, high dv/dt rating and fast current waveform tracking performances which makes it appealing to a wide range of applications especially in the medical and telecom sectors. Moreover, its low capacitance and low power consumption are also attractive properties that make it popular.
When it comes to its working principle, the NTGD4161PT1G consists of a voltage regulator, an N-Channel MOSFET and a resistor. The voltage regulator and the MOSFET are switched on and off to regulate the output current. The resistor helps to limit the current flow during overload condition. The MOSFETs then switch on and off once the current exceeds the predetermined limits, thus providing protection from large input current or an overvoltage.
Apart from providing protection, the NTGD4161PT1G also offers a wide range of other benefits such as low voltage operation, low power dissipation and high switching speeds. Additionally, the device also offers excellent resistance to noise, thermal stability and improved AC performance. These features enable the device to perform more reliably and efficiently in harsh and harsh environments.
In conclusion, the NTGD4161PT1G is a great device for a wide variety of applications including CPU power supplies, digital signal processing, general purpose arrays and PLL circuits. It offers both overcurrent and overvoltage protection, low power dissipation, high switching speeds and reduced noise levels. The device also provides excellent thermal stability, low on-state resistance and high frequency switching capability to extend the life of the device for a longer period of time.
The specific data is subject to PDF, and the above content is for reference
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