NTGD4161PT1G Allicdata Electronics
Allicdata Part #:

NTGD4161PT1G-ND

Manufacturer Part#:

NTGD4161PT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 30V 1.5A 6-TSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 1.5A 600mW Sur...
DataSheet: NTGD4161PT1G datasheetNTGD4161PT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTGD4161PT1G is a upgraded replacement for the old NTGD3020PT1G and is a low capacitance array fabricated with N-Channel Trench technology. It is designed to provide both overcurrent and overvoltage protection to the systems with high load capacitance. This array is being used in a wide range of applications such as CPU power supplies, digital signal processing, general purpose arrays and PLL circuits.

The NTGD4161PT1G is a device featuring both N-Channel MOSFETs, diodes and capacitors that provide both overcurrent and overvoltage protection. It is designed to deliver both high peak current and high current load to extend the life of the device for longer period of time, which makes it beneficial for various industrial applications. Additionally, it offers excellent thermal stability, low on-state resistance and high frequency switching capability.

NTGD4161PT1G, due to its advanced N-channel MOSH technology provides high-speed switching performance and low switching times. The device also offers high voltage breakdown, high dv/dt rating and fast current waveform tracking performances which makes it appealing to a wide range of applications especially in the medical and telecom sectors. Moreover, its low capacitance and low power consumption are also attractive properties that make it popular.

When it comes to its working principle, the NTGD4161PT1G consists of a voltage regulator, an N-Channel MOSFET and a resistor. The voltage regulator and the MOSFET are switched on and off to regulate the output current. The resistor helps to limit the current flow during overload condition. The MOSFETs then switch on and off once the current exceeds the predetermined limits, thus providing protection from large input current or an overvoltage.

Apart from providing protection, the NTGD4161PT1G also offers a wide range of other benefits such as low voltage operation, low power dissipation and high switching speeds. Additionally, the device also offers excellent resistance to noise, thermal stability and improved AC performance. These features enable the device to perform more reliably and efficiently in harsh and harsh environments.

In conclusion, the NTGD4161PT1G is a great device for a wide variety of applications including CPU power supplies, digital signal processing, general purpose arrays and PLL circuits. It offers both overcurrent and overvoltage protection, low power dissipation, high switching speeds and reduced noise levels. The device also provides excellent thermal stability, low on-state resistance and high frequency switching capability to extend the life of the device for a longer period of time.

The specific data is subject to PDF, and the above content is for reference

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