NTGD3147FT1G

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	SOT-23-6
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-25°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	400pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	5.5nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	145 mOhm @ 2.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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.NTGD3147FT1G Application Field and Working PrincipleThe NTGD3147FT1G is a single N-channel enhancement mode MOSFET manufactured by Nexperia. It has a low on-state resistance and is mainly used in wireless applications such as cellular phones and RF low noise amplifiers. This type of MOSFET is able to work with very low gate threshold voltages, making it suitable for use in low voltage applications. A MOSFET is a field effect transistor that controls the flow of current between its source and drain terminals. To see why this is important, it is necessary to understand the basic principles of transistor operation. The MOSFET is constructed from three layers of semiconductor material. The insulator is the middle layer and it separates the source and drain regions. A channel is then created at the interface between the insulator and the other two regions. The channel is what allows the current to flow from the source to the drain.The operation of a MOSFET is based on these two regions, the source and the drain. The voltage applied at the gate is the key factor in determining how much current can flow between the two regions. When the gate voltage is increased above the device’s threshold voltage, positive charges in the channel repel negative charges in the source and drain, creating an inversion layer in the channel. This inversion layer creates a path between the source and drain allowing current to flow. This process is known as the MOS transistor effect, and it determines the conductivity of the device.The NTGD3147FT1G is an enhancement mode MOSFET. Unlike depletion mode MOSFETs where the drain current is present even when the gate voltage is 0V, the NTGD3147FT1G requires a gate voltage to be greater than the threshold voltage for current to flow. This makes the NTGD3147FT1G particularly suitable for use in low voltage applications.In addition to their general use as switches, MOSFETs can also be used as amplifiers in applications such as RF circuits. The NTGD3147FT1G has a very low on-state resistance, making it especially well suited for such applications. As the channel of the device is much wider than typical transistors, the device has very low noise, making it ideal for use in RF low noise amplifiers.In summary, the NTGD3147FT1G is an enhancement mode MOSFET that is well suited for low voltage applications and RF circuits. With its low on-state resistance and low noise characteristics, it is a versatile device that can be used in a wide range of applications.

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