NTGD4167CT1G Discrete Semiconductor Products

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NTGD4167CT1G is an array of FETs (Field-effect transistors) MOSFETs (metal oxide semiconductor field-effect transistors). It is a four-channel, single-gate device that is used in a variety of industrial, commercial and residential applications. The NTGD4167CT1G is designed to provide high-speed switching of electrical signals up to 40 gigabytes per second. In most cases, the NTGD4167CT1G is used in applications requiring low-power and high-speed switching such as power management in personal computers and data centers, automotive and aerospace applications and high-speed data transmission systems.

The NTGD4167CT1G consists of multiple FETs formed in an array configuration. This array configuration allows the device to be switched along multiple channels simultaneously. Each channel consists of two FETs, which are connected in parallel. This allows the device to switch between two different voltage levels, which is especially useful in applications where multiple power sources are used. The NTGD4167CT1G array provides a low-power switching system that is extremely efficient while providing fast switching times.

The NTGD4167CT1G works by using the gate-to-source capacitance of the FETs in the array to store charge and control current flow. When a gate-to-source voltage is applied, the FETs in the array will align in the same direction, allowing the current to flow through the source-drain connections. When the voltage is removed, the FETs in the array will shut off and the current flow will be blocked.

The NTGD4167CT1G also offers additional features such as temperature protection, overvoltage protection, and robust ESD (Electrostatic Discharge) protection. Temperature protection ensures that the device does not overheat and that the switching performance is maintained. Overvoltage protection prevents the device from being damaged if an excessive voltage is applied. Finally, robust ESD protection ensures that the device is not destroyed by electrostatic discharge events. This feature ensures that the device is well-protected against any unexpected power surges that may occur.

The NTGD4167CT1G is a versatile FET MOSFET array that can be integrated into a variety of applications. Its multiple channel switching design makes it ideal for applications requiring high-speed and low-power switching. The integrated temperature and overvoltage protection make it a safe choice for many applications while the robust ESD protection helps ensure the safety of the device and its components. With its versatile features, the NTGD4167CT1G is an ideal solution for a variety of applications.

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