Allicdata Part #: | NTHS4501NT1-ND |
Manufacturer Part#: |
NTHS4501NT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 4.9A CHIPFET |
More Detail: | N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount Ch... |
DataSheet: | NTHS4501NT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 38 mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.1nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 462pF @ 24V |
FET Feature: | -- |
Power Dissipation (Max): | 1.3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
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NTHS4501NT1 is a single, Enhancement-mode, N-Channel Power MOSFET that is designed for high-power applications such as voltage regulator, power supply system and automotive application. This type of transistor has an excellent design to provide high blocking voltage with low on-state resistance.
The NTHS4501NT1 is manufactured using a silicon-gate high voltage technology and is composed of a four-terminal N-channel MOSFET. This device is comprised of a gate, drain, source, and body formed by the same substrate. The substrate is the semiconductor on which the transistor is formed and the gate is the controlling element of the transistor that is responsible for the operation of the device.
When the gate voltage increases, the electrons in the N-channel MOSFET moves away from the drain and to the gate, which results in a reduced drain-to-source resistance across the device and increased the current from the drain to the source. This process is known as enhancing mode and is the basis of the NTHS4501NT1’s operation.
The NTHS4501NT1 offers low on-state resistance, which is a measure of how easily the current can flow during normal operation. It also has an excellent high-breakdown voltage rating, which means that it can sustain greater voltages than other types of transistors. Its low on-state resistance and high-breakdown voltage rating make the NTHS4501NT1 an ideal choice for high voltage and power applications.
The NTHS4501NT1 is mainly used in switchmode power supplies and voltage regulators. It is also used in automotive applications such as audio systems and power windows. This device is well-suited for these applications because it is capable of delivering high blocking voltages with low on-state resistances, providing high levels of efficiency and performance.
In summary, the NTHS4501NT1 is a single, enhancement-mode, N-Channel Power MOSFET that is designed to offer high blocking voltage with low on-state resistance for high voltage and power applications. It is mainly used in switchmode power supplies and voltage regulators and automotive applications such as audio systems and power windows. With its excellent design, the NTHS4501NT1 is a reliable and efficient choice for a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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