NTHS5443T1G Discrete Semiconductor Products |
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Allicdata Part #: | NTHS5443T1GOSTR-ND |
Manufacturer Part#: |
NTHS5443T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 3.6A CHIPFET |
More Detail: | P-Channel 20V 3.6A (Ta) 1.3W (Ta) Surface Mount Ch... |
DataSheet: | NTHS5443T1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: | 600mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Vgs (Max): | ±12V |
FET Feature: | -- |
Power Dissipation (Max): | 1.3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTHS5443T1G is a popular N-channel Trench MOSFET. It belongs to the Trench MOSFET family of transistors, which are widely used in various electronic applications. This type of transistor has several advantages over its counterparts, such as increased power efficiency and reliability, and is widely used in various industries and applications. In this article, we will discuss the application field and working principle of the NTHS5443T1G transistor.
When it comes to the application field of the NTHS5443T1G, it is mainly used in switching applications. These can be found in a range of electronic applications that rely on switching, such as motors, relays, inverters, converters, and more. In such applications, the NTHS5443T1G would be used to control the on/off switching of the circuit. It can also be used in linear applications, such as audio amplifiers and radio systems. In general, these transistors are used to provide efficient switching and power control.
The working principle of the NTHS5443T1G is based on the idea of the field effect. This refers to the concept that an electric field can affect the behavior of molecules, and the behavior of transistors. In the case of the NTHS5443T1G, it consists of two elements, the gate and the drain. The gate is a conductive area that is insulated from the source and the drain. When a voltage is applied to the gate, it creates an electric field that affects the behavior of the molecules in the region between the source and the drain. This in turn affects the behavior of the transistor, allowing it to switch between on and off states.
The NTHS5443T1G is a well-known Trench MOSFET, and it has several advantages over its counterparts, such as increased power efficiency and reliability. It is widely used in various applications that require switching or power control, such as motors, relays, inverters, converters, and more. In addition, its working principle is based on the field effect, which makes it a very versatile transistor. All of these features make the NTHS5443T1G an attractive choice for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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