Allicdata Part #: | 1727-1284-2-ND |
Manufacturer Part#: |
NX3008PBKW,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 30V SOT323 |
More Detail: | P-Channel 30V 200mA (Ta) 260mW (Ta), 830mW (Tc) Su... |
DataSheet: | NX3008PBKW,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04199 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 260mW (Ta), 830mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 46pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.72nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 4.1 Ohm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NX3008PBKW,115 is a single, lateral double-diffused MOSFET (LDMOS) transistors. It is used for high voltage, high power (HVHV) applications. It is a lateral double-diffused MOSFET that is capable of providing a robust and flexible technology solution for switching, power supply and amplifier applications.
The NX3008PBKW,115 is a lateral double-diffused MOSFET transistor with an output current rating of up to 50A, breakdown voltage of up to 800V, and avalanche voltage of up to 18V. It is manufactured with a patented Delphi SU (surface-passivated) technology, making it one of the most reliable devices in its class. The device is ideal for high power, switchmode power applications and amplifier applications.
The NX3008PBKW,115 features a low on-state and off-state resistance, low input capacitance, and a high Miller-Capacitance, making it an excellent choice for high-efficiency switch-mode power applications. It also has an excellent avalanche capability, making it suitable for high-frequency switching applications. The device is a single gate device with a low RDS(on) and an integrated body diode, allowing for high-frequency switching.
The NX3008PBKW,115 is typically used for high voltage applications such as motor control and switching, power supply, and audio amplifier applications. Other applications include power converter circuits, power factor correction, industrial and automotive control circuits, and RF power amplifiers. The device is suitable for use in applications that require highly reliable operation and performance.
The working principle of the NX3008PBKW,115 is based on two polarities of the drain-source current. When the drain-source voltage is increased, the drain-source current increases until an upper limit is reached. If this upper limit is exceeded, the device will enter an avalanche mode and the current will be limited. The device can withstand high drain-source voltages, making it suitable for high voltage applications.
The NX3008PBKW,115 utilizes a lateral double-diffused MOSFET technology that provides superior performance, high reliability, and wide operating temperature range. The device also offers a low gate capacitance, low thermal resistance and high gain, making it ideal for high voltage, high power applications. The device is also capable of providing low on-state and off-state resistance and low input capacitance, making it ideal for use in switching applications.
In conclusion, the NX3008PBKW,115 is a lateral double-diffused MOSFET transistor that is ideal for high voltage, high power applications. It is a single gate device with a low RDS(on) and an integrated body diode, allowing for high-frequency switching. The device can withstand high drain-source voltages and offers a low on-state and off-state resistance, low input capacitance, and a high Miller-Capacitance. It is suitable for use in motor control and switching, power supply, and audio amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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