P1803UCRP Circuit Protection |
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Allicdata Part #: | P1803UCRPTR-ND |
Manufacturer Part#: |
P1803UCRP |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Littelfuse Inc. |
Short Description: | SIDACTOR 150V 400A PROT 6SMD |
More Detail: | N/A |
DataSheet: | P1803UCRP Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | SIDACtor® |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Breakover: | 210V |
Voltage - Off State: | 150V |
Voltage - On State: | 8V |
Current - Peak Pulse (8/20µs): | 400A |
Current - Peak Pulse (10/1000µs): | 100A |
Current - Hold (Ih): | 150mA |
Number of Elements: | 3 |
Capacitance: | 55pF, 85pF |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Gull Wing |
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Thyristors are a family of semi-conductors that are used in various electronic applications, including waveform generators, switches, and rectifiers. The P1803UCRP is a unique type of thyristor that has been specifically designed to provide enhanced levels of power efficiency, reliability, and longevity in a wide range of electronic systems. In this article, we will discuss the application field and working principle of the P1803UCRP.
The P1803UCRP thyristor is capable of switching high voltages of up to 8700 volts and high currents of up to 900 amperes. It is ideally suited for powering circuits in industrial motor control, generator control, and other applications. Its superior power characteristics make it an ideal choice for applications in which power efficiency and control are critical. This thyristor is also widely used in power systems, such as inverters, welding machines, and HVDC systems, where high current control and fast switching are required.
The P1803UCRP is constructed using the latest advancements in semi-conductor technology. The thyristor has a silicon-controlled rectifier (SCR) as the base material. The SCR consists of three parts: an SCR gate, the SCR anode, and the SCR cathode. The SCR gate is the control element of the thyristor. The SCR gate provides control of the current flow through the SCR anode by opening and closing the gate in a manner similar to a switch. The SCR anode and cathode are connected through a metal contact or a diode. The metal contact is responsible for providing a current path through the thyristor, while the diode provides protection against current surge.
The P1803UCRP is capable of a variety of functions that make it very useful in a variety of applications. It is able to operate in both linear and switch mode, making it ideal for controlling high voltage and high current circuits. The thyristor can also operate at various frequencies, making it ideal for high speed applications. Additionally, the P1803UCRP has a very low power dissipation which enables it to be used in high-temperature applications without the need for large heat sinks.
The working principle of the P1803UCRP is based on a voltage or current control. When there is an alternating current (AC) or direct current (DC) applied to the thyristor, the device detects the potential difference and sends an electrical current through the SCR gate. When the SCR gate is open, the thyristor will conduct current and when the SCR gate is closed, the thyristor will not conduct current. This enables the thyristor to be used as a switch or a rectifier.
In conclusion, the P1803UCRP is an advanced thyristor that offers superior performance and reliability in a variety of electrically-controlled applications. The device’s ability to switch high voltages and high currents makes it suitable for applications such as motor control, generator control, and HVDC systems, while its low power dissipation and high frequency switching capabilities make it ideal for high-temperature applications. The thyristor is based on a voltage/current control principle and is constructed using the latest advancements in semiconductor technology.
The specific data is subject to PDF, and the above content is for reference
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