Allicdata Part #: | P2N2222AOS-ND |
Manufacturer Part#: |
P2N2222A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.6A TO92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625m... |
DataSheet: | P2N2222A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | P2N2222 |
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The P2N2222A is a kind of single bipolar junction transistor (BJT). It is mainly used in audio amplifiers, low noise amplifiers and many other small signal switching applications. It has PNP type polarity and a higher gain value in comparison to other BJTs. The P2N2222A is designed to switch ON and OFF very quickly and delivers precise performance for low power applications.
The P2N2222A is composed of two p-type layers, two n-type layers and two electrodes. The two p-layers are in a parallel connection and form the collector base junction. The two n-type layers make up the emitter base junction. The collector is the input side of the transistor and is usually connected to the positive side of the power supply while the emitter is attached to the emitter/ground connection. The base is the control side of the transistor which is connected to a voltage source.
The operating principle of the P2N2222A is based on the concept of the bipolar junction transistor or BJT. It works by using two p-type layers, two n-type layers, and two electrodes. The two p-type layers form the collector base junction and two n-type layers make up the emitter base junction. When a voltage is applied to the base, the electrons in the n-type layer will be attracted to the base, creating a base-emitter current. This current in turn creates a voltage across the collector and emitter as current travels from the collector to the emitter. This voltage gain across the collector and emitter is known as the "alpha" factor. When the base-emitter current is close to zero, the transistor is in its OFF state.
The P2N2222A is one of the most important components used in audio amplifiers and low noise amplifiers. The P2N2222A is also used in general digital and analog circuits, including astable and oscillator circuits, switching and logic circuits, as well as motor control circuits. Its large current gain, high speed switching, and low noise generation make it a very useful bipolar junction transistor.
As with all transistors, it is important to note the P2N2222A\'s maximum collector and emitter current and maximum collector-emitter voltage ratings. It is also important to note that the operating temperature range for the P2N2222A should not exceed beyond its rated values for reliable operation.
In summary, the P2N2222A is an important single bipolar junction transistor. As such, it has wide usage in audio amplifiers, low noise amplifiers, astable and oscillator circuits, switching and logic circuits and motor control circuits. Its high current gain, high speed switching, and low noise generation make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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