P2N2222AZL1G

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The P2N2222AZL1G is a NPN Bipolar Junction Transistor (BJT) designed for general purpose amplifier, low noise amplifier, and switching applications. It is a single type transistor, known for having high gain and low collector-emitter saturation voltage. This device is made from the highest quality components, and is constructed using a process which ensures low noise, low leakage and high reliability. In addition, the P2N2222AZL1G has ESD protection up to 16kV.

The P2N2222AZL1G is suitable for use in a wide range of amplifier, switching, motor control and light dimmer applications. In general, it is used as a low noise and high gain amplifier in audio and RF circuits. It can also be used as a digital switch, temperature control, communication interface, and power amplifier.

The P2N2222AZL1G works by allowing current to flow from the collector to the emitter when there is a voltage present on the base. To create amplification, the current gain of the device is increased, allowing the input voltage to be amplified as it passes through the transistor. The current gain of the P2N2222AZL1G is typically in the range of 300 to 500, allowing a small current at the base to drive a larger current at the collector.

The P2N2222AZL1G has a relatively low power consumption of 0.2A (max). This means that it can be used in low power or portable applications without having to worry about high power consumption. The device also has a high voltage breakdown limit of 50V, allowing it to be used in circuits that require a higher voltage.

The P2N2222AZL1G is also designed with a high collector-emitter saturation voltage of 0.2V (max). This allows the device to have a better linear operation and more reliable operation over a wide range of conditions. In addition, the P2N2222AZL1G has a low noise figure, with a typical value of 1 dB.

The P2N2222AZL1G is also an inexpensive device, with a low price tag compared to other transistors on the market. This makes it a great option for designers looking for an affordable transistor that can handle a wide range of applications with high performance.

In conclusion, the P2N2222AZL1G is a single type Bipolar Junction Transistor (BJT) designed for general purpose amplifier, low noise amplifier, and switching applications. It has a high gain, low collector-emitter saturation voltage, ESD protection up to 16kV, low power consumption, and high voltage breakdown limit of 50V. It is suitable for use in low power or portable applications and is an inexpensive device, making it an economical option for circuit designers.

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