P2N2907AG

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The P2N2907AG is a Silicon NPN Bipolar Junction Transistor (BJT) which is specifically designed for use in Switching Circuits, Amplifiers and Automotive applications. It is an epitaxial planar transistor and can be used with a small signal up to a maximum of 100V. Being in a medium power range and having a continuous collector current of 0.2 watts, it is ideal for Switching applications and has a fast switching action.

The P2N2907AG is constructed from three semiconductor layers of N-type silicon. The two outer layers or base are connected to a collector and a third layer, known as an emitter, is situated between them. The three layers are separated by a thin insulating or semi-conducting material known as a P-type (positive type) barrier. By controlling a small current in the base it is possible to control a much larger current between the collector and the emitter.

In order to understand its working principle, let us analyze the working of the P2N2907AG. When a small current is applied to the Base, electrons are allowed to flow from the emitter to the collector. This current, when passed through the Collector–Base junction, carries current to the base resulting in a greater current flowing from the collector to the emitter. This is known as the avalanche current and it equation is characterized by avalanche voltage. Turing the avalanche current ON, i.e. Initiating conduction, we can increase the collector current up to the saturation level. This allows the current, flowing from the collector to the emitter, to remain constant.

The P2N2907AG a general-purpose bipolar transistor is an economical solution for those applications requiring fast switching action, such as audio amplifiers, switching circuits, motor controllers, power supplies and voltage converters. Also, its low saturation voltage and high gain make it suitable for a variety of medium power switching applications and automotive uses. The device has a relatively low collector–emitter saturation voltage (Vce(sat)) of about 0.4V and a current gain of approximately 200. The N-channel device also has an operating temperature range between -65°C to 150°C.

In conclusion, the P2N2907AG is a versatile semiconductor component that can be used in many applications. It comes with a variety of features such as high gain and low saturation voltage, making it an ideal choice for medium power switching applications. The device is fully RoHS compliant, making it an environmentally friendly solution and provides an economical solution for a variety of needs. To further ensure the quality of your application, it is necessary to check the specifications against the needs of the application to confirm proper selection.

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