Allicdata Part #: | P2N2222AZL1-ND |
Manufacturer Part#: |
P2N2222AZL1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625m... |
DataSheet: | P2N2222AZL1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | P2N2222 |
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P2N2222AZL1 Application Field and Working Principle
The P2N2222AZL1 is a bipolar NPN transistor manufactured by ON Semiconductor. It is most commonly used in amplifiers, switching circuits, and in audio circuits. It is also used in many consumer and industrial electronic products, including consumer appliances and consumer electronics.
The P2N2222AZL1 is a silicon NPN transistors with a 45 Volt collector-emitter voltage range, 250 mA collector current, and an effective operating temperature range from –55 to +150 °C. It has a second-order dynamic characteristic and is able to withstand high voltage spikes. The P2N2222AZL1 has a maximum power rating of 500 mW and a maximum collector-emitter voltage of 45 V.
The P2N2222AZL1 is a type of BJT (Bipolar Junction Transistor). BJTs are semiconductor transistors that use junctions between n and p type semiconductors to control an electrical current. These transistors use holes and electrons to produce an electrical current. A BJT consists of a P type base and an N type emitter, connected by a thin semiconductor. The current flows in the opposite directions in the N and P type semiconductors.
When the base-emitter junction is forward biased, the transistor is turned on and current passes through the collector-emitter junction. The collector-emitter current is based on the currents in the base-emitter junction and is greater than the current in the base-emitter junction. The collector voltage is also affected by the voltage across the base-emitter junction, thus controlling the collector-emitter current. The collector-emitter current is also influenced by any current flowing through the base-collector junction.
Since the P2N2222AZL1 is a single BJT, it consists of three terminals: the base, the collector, and the emitter. The emitter is the negative terminal, while the collector and the base are positive. The base-emitter junction acts as a voltage source, so the base acts as an input. The collector is the output, and the current flow from the collector to the base, controlled by the base-emitter voltage. The base-collector voltage controls the amount of current that flows through the collector-emitter junction.
The P2N2222AZL1 is widely used in many applications, including amplifiers, switching circuits, and audio circuits. It is also widely used in a range of electronic products, such as consumer appliances and consumer electronics. Its high collector current and low noise performance make it suitable for a variety of applications. The P2N2222AZL1 is an efficient device and has a very low thermal resistance.
The specific data is subject to PDF, and the above content is for reference
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