PCP1103-TD-H

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	375mV @ 15mA, 750mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	1.3W
Frequency - Transition:	450MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PCP

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Introduction

The PCP1103-TD-H application field and working principle are the most commonly used in transistors. A transistor is a semiconductor device that conducts electricity when an appropriate electrical signal is applied. Transistors are commonly found in electronic circuits such as amplifiers and logic gates. Transistors are divided into two major categories: bipolar junction transistors (BJTs) and field-effect transistors (FETs). The PCP1103-TD-H belongs to the family of bipolar junction transistors, which are used to amplify and switch electric signals.

BJT Basics

A bipolar junction transistor (BJT) is composed of three terminals called the base, collector, and emitter. The BJT has an approximately symmetrical structure, made up of two PN junctions connected back to back. When a voltage is applied across the base and emitter of the BJT, it will cause the electrons to flow from the emitter to the collector. This flow of electrons is called the collector current.

PCP1103-TD-H Application Field

The PCP1103-TD-H is a NPN bipolar junction transistor, commonly used in various applications. These include amplifiers, switching circuits, and as an analog signal–processing device in various optical and electrical system circuits. It is also used as a driver in transducers, as well as in digital logic circuits, such as flip-flops, counters, and shift-register circuits.

Characteristics & Working Principle

The PCP1103-TD-H has several distinct characteristics. One of the more important characteristics of the PCP1103-TD-H is its current gain. This is a measure of the amount of amplification of an input signal, which is represented by the amplification factor hFE. It is also capable of high-speed operation, with a transition frequency (fT) of 650 MHz. This makes the PCP1103-TD-H ideal for RF signal applications. The working principle of the PCP1103-TD-H is based on the flow of electrons between the emitter and collector. When an appropriate voltage is applied to the base terminal of the BJT, it will cause the electrons to flow from the emitter to the collector. This creates the collector current and amplifies the input signal.

Conclusion

The PCP1103-TD-H is a commonly used NPN bipolar junction transistor, with various applications in digital and analog signal processing. It has a high current gain and a high transition frequency, making it ideal for RF signal applications. The working principle of the PCP1103-TD-H is based on the flow of electrons between the emitter and collector, which is amplified by the applied voltage. This transistor is an excellent choice for achieving a high level of performance in electronic circuits.

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