Allicdata Part #: | PCP1203-P-TD-H-ND |
Manufacturer Part#: |
PCP1203-P-TD-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 1.5A PCP |
More Detail: | Bipolar (BJT) Transistor NPN 30V 1.5A 500MHz 1.3W ... |
DataSheet: | PCP1203-P-TD-H Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 225mV @ 15mA, 750mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 1.3W |
Frequency - Transition: | 500MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PCP |
Description
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The PCP1203-P-TD-H is a single low power NPN transistor. It is packaged in a TO-92 packaging, has a maximum collector current rating of 500mA, and a maximum collector-emitter voltage of 30V. This transistor is typically used in applications such as audio amplifiers, switching applications, and small signal amplifiers. It is also used in circuits that require low power operation.The PCP1203-P-TD-H is a bipolar junction transistor (BJT). A BJT is composed of three layers of doped semiconductor material, a p-n-p structure or an n-p-n structure. It is a current-controlled device with each layer connected to the other layers through the emission and collection of charge carriers, which are electrons and holes.The three layers of a BJT are the base, collector, and emitter. The base is the layer closest to the center of the transistor, and it is the layer that control the current that can flow through the transistor. The emitter is the layer that emits the electrons, while the collector is the layer that collects the electrons.When the PCP1203-P-TD-H is in use, electrons flow from the emitter to the collector when a voltage is applied to the base. The voltage applied to the base affects the amount of electrons that flow from the emitter to the collector. The amount of electrons that flow is referred to as the current gain. The collector-emitter voltage will be proportional to the current gain.The PCP1203-P-TD-H has a wide range of applications. It can be used to amplify small signals, such as audio signals. It can also be used to amplify radio frequency signals, and in switching applications. It can also be used in high frequency circuits, such as a common emitter amplifier. Additionally, it can be used in power amplifiers and low noise amplifiers in radio frequency circuits.The PCP1203-P-TD-H is a reliable, low power, single NPN transistor. Its small size and low power consumption makes it suitable for a wide range of applications. It is also temperature-stable and has a wide range of current gain. Its low cost and high performance make it an excellent choice for audio amplifiers, switching applications, small signal amplifiers, and many other applications.
The specific data is subject to PDF, and the above content is for reference
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