PCP1402-TD-H Allicdata Electronics
Allicdata Part #:

PCP1402-TD-HOSTR-ND

Manufacturer Part#:

PCP1402-TD-H

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 250V 1.2A SOT89
More Detail: N-Channel 250V 1.2A (Ta) 3.5W (Tc) Surface Mount S...
DataSheet: PCP1402-TD-H datasheetPCP1402-TD-H Datasheet/PDF
Quantity: 1000
1000 +: $ 0.16934
2000 +: $ 0.15347
5000 +: $ 0.14288
10000 +: $ 0.14112
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Package / Case: TO-243AA
Supplier Device Package: SOT-89/PCP-2
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 3.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 600mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PCP1402-TD-H is a type of metal oxide semiconductor field-effect transistor (MOSFET). MOSFETs are three-terminal active devices with variable resistances through which electrical current is controlled. It is a very significant type of power semiconductors that have a wide range of applications in many industries such as telecommunications, automotive, household, industrial and aerospace. Due to the advantages offered by this type of transistor, such as low on-state resistance, low power dissipation, and high switching speed, it is widely used for high-speed switching, power management, and lossless energy transmission. In addition, the PCP1402-TD-H is also known for its high stability and excellent noise immunity.

The PCP1402-TD-H is a single-gate MOSFET and part of the product family of MOSFETs with built-in temperature sensor and zener diode. It has a drain-source breakdown voltage of 40V, a gate-source breakdown voltage of 11V, a continuous drain current of 20A, a RDS(on) of 40mΩ, a maximum power dissipation of 57.3W and a maximum channel-temperature of 175°C. It is available in a P-Channel PowerH-MOSFET package and is considered one of the most efficient MOSFETs on the market.

The PCP1402-TD-H is used in multiple fields and various applications. In electronics, it can be used for power management purposes. For example, it can be used to protect circuits and components from high voltages and high currents. Furthermore, it can be used in the automotive and aerospace industry as an electronic power switch or as an inverter control device. Moreover, it is also commonly used in servers, routers, and other data transmission applications.

The working principle of the PCP1402-TD-H single-gate MOSFET is based on the Gate-Drain and Gate-Source voltage differences. When the Gate-Drain voltage difference is positive, a threshold voltage is generated by the gate, which is used to turn on the transistor. Conversely, when the Gate-Source voltage difference is zero, the device will remain off. The current will flow through the drain and source terminals and then a voltage drop across the source-drain junction is generated, which is responsible for an electrical signal transmission. In short, when a positive voltage is applied to the Gate Electrode and the two other electrodes are connected, the device will be turned on, while when the Gate-Source voltage difference is zero, the device will remain off.

In conclusion, the PCP1402-TD-H is a single-gate MOSFET with a wide range of applications. It is well-known for its low on-state resistance, low power dissipation and high switching speed. It is commonly used in telecommunications, automotive, household, industrial and aerospace applications. The working principle of the device is based on the Gate-Drain and Gate-Source voltage differences, where a positive voltage will turn on the device and a zero voltage will keep it off.

The specific data is subject to PDF, and the above content is for reference

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