Allicdata Part #: | PDZVTR10BTR-ND |
Manufacturer Part#: |
PDZVTR10B |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | ZENER DIODE |
More Detail: | Zener Diode 10.6V 1W ±5.66% Surface Mount PMDTM |
DataSheet: | PDZVTR10B Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07387 |
6000 +: | $ 0.06939 |
15000 +: | $ 0.06492 |
30000 +: | $ 0.05954 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10.6V |
Tolerance: | ±5.66% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 6 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 7V |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | PMDTM |
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Diodes, especially Zener diodes, are one of the most versatile components available in electronics. They are used in a variety of applications, ranging from power rectification to Voltage regulator circuits. Among the most popular and widely used diode is the PDZVTR10B, which has a wide range of application fields and excellent working principles.
Application Fields
The PDZVTR10B Zener diode is a highly reliable, low-power Zener diode ideal for a wide range of applications. It can be used in reverse bias circuits where it acts as a voltage regulator, providing a constant voltage output. It is also used in voltage-clamping circuits where it acts as a surge protector, clamping the voltage at a predetermined value. The wide Zener Breakdown Range of the PDZVTR10B makes it suitable for a vast range of applications, from consumer electronics to industrial applications.
The PDZVTR10B can also be used for signal processing. It can be used to rectify signals produced by a radio transmitter, and it can also be used to restrict the peak-to-peak voltage of a signal waveform. The low capacitance of the PDZVTR10B also makes it suitable for high-frequency applications, such as those found in telecommunications.
Working Principle
The PDZVTR10B Zener diode consists of a semiconductor junction, usually P-type, with an N-type doping material injected into a region of the junction, known as the “Zener Region”. This region has a very low breakdown voltage, lower than the corresponding forward bias voltage, and is surrounded by an insulating “Junction”, preventing the resistive flow of charges from the Zener Region. This “Junction” helps in making the PDZVTR10B suitable for many applications.
As current flows into the PDZVTR10B Zener diode, electrons accumulate in the Zener Region, creating a region of increasing electrical potential. When this potential reaches the breakdown voltage, the electrons are able to cross the junction and the current increases exponentially, allowing for the voltage to be regulated to that of the breakdown voltage. This is the basis for the functionality of the PDZVTR10B, and why it is so useful for a variety of applications, from surge protection to signal processing.
The breakdown voltage of the PDZVTR10B Zener diode is determined by the levels of doping in the Zener Region, and can be easily adjusted by selecting the proper doping material. By choosing the proper doping level, it is possible to control the breakdown voltage of the PDZVTR10B to precisely match the voltage requirements of the application.
Conclusion
The PDZVTR10B Zener diode is an incredibly useful component, with a wide range of applications. It is highly reliable, with a low power consumption, and it has a wide Zener Breakdown Range, making it ideal for many different applications. The working principles of the PDZVTR10B are relatively easy to understand, and by selecting the proper doping material it is possible to precisely control the breakdown voltage. The PDZVTR10B Zener diode is therefore highly recommended for voltage regulation and signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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