PDZVTR9.1B Allicdata Electronics
Allicdata Part #:

PDZVTR9.1BTR-ND

Manufacturer Part#:

PDZVTR9.1B

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: ZENER DIODE
More Detail: Zener Diode 9.65V 1W ±5.7% Surface Mount PMDTM
DataSheet: PDZVTR9.1B datasheetPDZVTR9.1B Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07387
6000 +: $ 0.06939
15000 +: $ 0.06492
30000 +: $ 0.05954
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 9.65V
Tolerance: ±5.7%
Power - Max: 1W
Impedance (Max) (Zzt): 6 Ohms
Current - Reverse Leakage @ Vr: 20µA @ 6V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Description

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Diodes - Zener - Single - PDZVTR9.1B Application Field and Working Principle

The PDZVTR9.1B diode is a single Zener diode that is commonly used in various electrical and electronic applications for various power dissipation and temperature operating characteristics. This diode is typically constructed in an elongated glass package that provides sufficient protection for its internal components. It features a cathode section for electrostatic capacitance, a central 100 ohm resistor for energy dissipation, and two zinc-oxide diodes that series-mounted in the same package.

PDZVTR9.1B\'s application field mainly includes application circuits requiring regulated power supplies. These circuits include DC/DC converters and DC/AC inverters. This diode is desirable due to its low static power dissipation of 9.1 volts, which provides regulated power supplies with improved efficiency. The device is also used in high-voltage capacitors for suppressing static spikes that may be introduced into industrial systems. Additionally, the device is employed in various applications such as rectification and conversion of radio signals, power filtering, noise reduction, and voltage regulation.

The working principle of the PDZVTR9.1B diode is based on the Zener effect. This effect occurs when a semiconductor is connected in a reverse-biased direction. A voltage applied to the diode\'s P-N junction will cause a current flow that is limited by the diode\'s barrier potential. When the current reaches its limit, the junction potential breaks down, allowing the diode to enter a region of negative dynamic resistance. This region is known as the Zener breakdown region and is characterized by a sharp reduction in dynamic resistance.

The operation of the PDZVTR9.1B single Zener diode typically occurs at temperatures between -60°C to +175°C. As the current reaches its limit, the diode will enter a state of significant power dissipation and can sustain a current up to 5mA. The voltage will remain approximately constant for values up to 9.1 V, making it suitable for use as a voltage reference in low power regulation systems.

In conclusion, the PDZVTR9.1B single Zener diode is a commonly used device for various power dissipation, temperature, and voltage applications. Its operation depends on the Zener effect, allowing it to enter a region of negative dynamic resistance and remain at a constant voltage up to 9.1 V, making it suitable for regulation systems. It can also be used in circuits requiring high-voltage capacitors, radio signal rectification and conversion, power filtering, noise reduction, and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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