PHE13003A,412 Allicdata Electronics
Allicdata Part #:

PHE13003A,412-ND

Manufacturer Part#:

PHE13003A,412

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: TRANS NPN 400V 1A SOT54
More Detail: Bipolar (BJT) Transistor NPN 400V 1A 2.1W Through...
DataSheet: PHE13003A,412 datasheetPHE13003A,412 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V
Power - Max: 2.1W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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PHE13003A,412 Application Field and Working Principle

The PHE13003A,412 is a type of transistor designed and manufactured by Phillips, a technology giant based in the Netherlands. It is a bipolar NPN Junction Transistor (BJT) with single transistor chip. It features excellent insulation performance, low operating current and voltage, maturation and adhesion.

Application Fields

The PHE13003A,412 can be used in many applications such as in power amplifiers, voltage regulators, switch applications, or motor control and switching for industrial automation needs. Additionally, it is also able to meet special demands in terms of low noise, high speed and a frequency. Usage in many fields like professional audio, automotive electronics, OLED displays, and communication systems are also possible through the PHE13003A,412.

Working Principle

Basically, a BJT is made up of two p-n junctions, formed by a combination of three layers of semiconductor material. Inside the PHE13003A,412, the two junctions are angled so that the twoEmitter and Collector layer diagonal to each other. The side facing outwards with the two layers forming a line is the Base layer. When an electrical current passes through the Base layer, it switches on the transistor, enabling electrical current to flow between the Emitter and Collector.

Transistors can be used to amplify and reduce electrical signals. When the Base Accepts current, it switches the ‘gate’ open, allowing current to flow across the Collector and Emitter layers. As the current passes across the two layers, it begins to build up a charge, producing an Amplification of the original signal. This Amplified signal is then passed on to theCollector. Transistors can also be used to reduce or reduce signals, also known as attenuation or clippings. In this case, the current is blocked from passing though the transistor.

Conclusion

The PHE13003A,412 is an ideal transistor for many applications due to its excellent insulation performance, low operating current and voltage, maturation and adhesion. It is suitable for usage in power amplifiers, voltage regulators, switch applications and more. Its working principle is simple yet effective, allowing it to adequately amplify or reduce signals depending on its usage.

The specific data is subject to PDF, and the above content is for reference

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