| Allicdata Part #: | PHE13003C,412-ND |
| Manufacturer Part#: |
PHE13003C,412 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | WeEn Semiconductors |
| Short Description: | TRANS NPN 400V 1.5A SOT54 |
| More Detail: | Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Throu... |
| DataSheet: | PHE13003C,412 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1.5A |
| Voltage - Collector Emitter Breakdown (Max): | 400V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500mA, 1.5A |
| Current - Collector Cutoff (Max): | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 5 @ 1A, 2V |
| Power - Max: | 2.1W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
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.PHE13003C,412 is a type of distant control bipolar junction transistor (BJT). It can be applied to transistors and crossovers that require precise adjustment and control of electrical signals. The precise adjustment allows for precise measurements as well as for controlling other electrical components.
BJTs are made up of three layers of semiconductor material, each layer separated by a thin insulator. Each layer is then connected to a pair of electrodes, the base and collector, which are the channels through which current can flow. This type of BJT is a common base configuration, meaning that the middle layer, the base, is the one which most electrical current flows through. The other two layers, collector and emitter, are where the current is being manipulated and controlled.
The PHE13003C,412 is an N-channel BJT, which means that when voltage is applied to the base the current flows from collector to emitter. This current can then be adjusted and controlled using the base voltage. When the voltage applied to the base is high, more electrons are allowed to flow, thus increasing the current flow. Conversely, when the voltage applied to the base is low, fewer electrons are allowed to flow, thereby reducing the current flow. This makes the PHE13003C,412 extremely well suited for applications where precise current control is necessary.
Some of the applications which the PHE13003C,412 can be used for include making devices with low power consumption, such as solar cells. It can also be used to control the current levels in digital circuits. It is also used in the design of power control circuits, and even for radio transmitters and receivers when precise current adjustments are necessary.
The PHE13003C,412 is an important component in many different kinds of electronics. Its ability to easily and precisely adjust current levels makes it a powerful tool to design complex and precise electronics. It also has a wide range of applications in the engineering field, making its use in engineering projects very popular. When used correctly, it can help to ensure that a device is as efficient as possible and that its performance is as accurate as possible.
The PHE13003C,412 is a great addition to any circuit design project. Its wide range of applications and its precise current control makes it a powerful tool. The wide range of applications and its precise current control make it a great choice for many engineering projects. The PHE13003C,412 is a great choice for any project that requires precise current control and reliable results.
The specific data is subject to PDF, and the above content is for reference
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PHE13003C,412 Datasheet/PDF