PHE13007,127 Allicdata Electronics
Allicdata Part #:

1740-1443-ND

Manufacturer Part#:

PHE13007,127

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: TRANS NPN 400V 8A TO220AB
More Detail: Bipolar (BJT) Transistor NPN 400V 8A 80W Through ...
DataSheet: PHE13007,127 datasheetPHE13007,127 Datasheet/PDF
Quantity: 4845
1 +: $ 0.41580
10 +: $ 0.36414
100 +: $ 0.27915
500 +: $ 0.22068
1000 +: $ 0.17654
Stock 4845Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1A, 5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 80W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: PHE13007
Description

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PHE13007,127 is a high-power, PNP, single-transistor bipolar junction transistor (BJT). It is manufactured by NEC and is well-suited for applications such as power switching, amplification, and for driving inductive and resistive loads. This transistor is commonly used in power supplies and driver circuits.

The chip has a power rating of 180W and has an operating frequency of up to 500KHz. The maximum voltage of this transistor is 250V and the maximum current is 21A. This allows the device to handle high power applications with a relatively low power consumption.

The package of this transistor is a TO-3 case, which allows for a simple installation. This transistor can be used in various applications such as switching, amplification and driving circuits. It can also be used in motor control applications.

The working principle of this transistor is based on the principle of the PN junction diode. This diode is responsible for allowing current to flow from the P side to the N side. When a voltage is applied to the P side, the electrons start flowing from the N side. This produces a strong minority carrier concentration, creating a high electric field. This field is called the PN junction barrier potential and it stops the current from going back to the N side, thereby allowing the current to flow from the P side to the N side.

When a base voltage is applied to the base of the transistor, the electrons are attracted towards the base, which causes a current to flow from the emitter to the collector. This current is called the collector current and it is amplified by the collector. The current sourced by the emitter is then amplified by the transistor and the output is taken from the collector.

The PHE13007,127 is a great choice for high-power applications such as switching and amplification. This transistor can be easily integrated into circuits and is widely used in a variety of applications. The device is also cost-effective, making it an ideal choice for space-constrained and cost-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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