Allicdata Part #: | 1740-1387-ND |
Manufacturer Part#: |
PHE13005X,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | WeEn Semiconductors |
Short Description: | TRANS NPN 400V 4A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 400V 4A 26W Through ... |
DataSheet: | PHE13005X,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 1A, 4A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 2A, 5V |
Power - Max: | 26W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220F |
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PHE13005X,127 is a type of bipolar single transistor (BJT). It’s an NPN Bi-Polar Junction Transistor (BJT). It is often used as an oscillator, amplifier, switching device and even a digital logic gate. It has low power dissipation, wide voltage range and can handle large operating temperature. It is capable of operating at frequencies up to GHz range.
The application of the PHE13005X,127 includes telecom and test equipment, amplifier/attenuator circuits, motor drives, general purpose amplification, logic level switching, signal generation, signal buffering and memory addressing. It is also applied in low-frequency signal sources, time-delayed switching circuits and passive audio crossover networks.
This single transistor consists of three component terminals namely emitter, collector and base. A transistor allows current to flow from the collector to the emitter when a current is supplied to the base terminal. This is known as current amplification. It is what makes the single transistor a viable source of signal processing, one of its greatest application fields.
The working principle of the PHE13005X,127 involves the base current. The higher the base current, the lower the collector-emitter voltage drop (VCE). The voltage between the collector and the emitter is usually about 0.6V for silicon transistors. The higher the base current, the higher the current flow from the collector to the emitter since the voltage drop across the collector-emitter voltage is very small.
In terms of power output, the power gain of this single transistor is determined by the ratio of the collector current to the base current. This ratio is known as current transfer ratio (ICR). The higher the ICR value, the higher the power gain. Generally, the ICR of the single transistor increases with increasing collector current, which is why it is often used in medium and high power applications.
The PHE13005X,127 has many advantages, such as its low-power dissipating, operation up to GHz range, wide voltage range and high ICR. These advantages, combined with its various application fields and working principles, make this single transistor an ideal choice for many electronic systems. Because of its performance, this single transistor can also be used for many commercial and consumer applications, thus making it a valuable electronic device for many users.
The specific data is subject to PDF, and the above content is for reference
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