PHKD13N03LT,118

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The PHKD13N03LT,118 is a semiconductor device that belongs to the Transistors - FETs, MOSFETs - Arrays class. It is a power MOSFET device in a 2-pin through hole surface mounted package.

The Basic Characteristics of PHKD13N03LT,118 are:

• Drain-Source Breakdown Voltage: 60 V
• Drain Current: 8 A (max)
• Drain-Source On-state Resistance: 0.072 Ω max
• Power Dissipation @ 25 °C: 40 W (max)
• Operating Temperature Range: -55 °C to + 150 °C

The PHKD13N03LT,118 is a power Metal Oxide Semi-Conductor Field-Effect Transistor (MOSFET). It has a voltage controlled current source, or switch. Unlike the traditional BJT, it has increased switching performance and lower drain-source on-state resistance, which translates to a better power efficiency.

The most important part of the PHKD13N03LT,118 is its gate terminal. The gate terminal is responsible for controlling the drain-source current which is known as VGS (gate-source voltage). When VGS is low, the device operates in depletion mode, meaning there is no current flow between the drain and source terminals. When VGS is increased, the device operates in enhancement mode, meaning current will flow between the drain and source terminals.

The PHKD13N03LT,118 is designed for applications requiring low power consumption and low switching losses such as power supplies, DC/DC converters, DC motor control and load switching. It can also be used for lighting and other switching operations.

Since this MOSFET device has a low on-state resistance, low overall power consumption can be achieved. This makes it an ideal choice for applications that require high efficiency such as server applications and telecoms.

Additionally, due to its low thermal resistance, this device is ideal for high-temperature applications and can be used in automotive and military-grade applications which require extreme temperature range and high-reliability performance.

The PHKD13N03LT,118 has a very low gate charge, and thus is well-suited for applications that require fast switching speeds. This device has a low rate of fall time, which enables fast response time and high-frequency switching operations.

Overall, the PHKD13N03LT,118 is an ideal device for high efficiency and low power applications, due to its low thermal resistance, low on-state resistance and low gate charge. Its wide range of applications, from high-temperature automotive, military and telecoms uses, make it a desirable choice for many applications.

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