Allicdata Part #: | PHKD3NQ10T,518-ND |
Manufacturer Part#: |
PHKD3NQ10T,518 |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 100V 3A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 3A 2W Surface... |
DataSheet: | PHKD3NQ10T,518 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.37397 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 633pF @ 20V |
Power - Max: | 2W |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PHKD3NQ10T, 518 is one of the most commonly used MOSFET Arrays. The term MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, and the PHKD3NQ10T, 518 is one of the most versatile and reliable devices on the market today. By utilizing Silicon on Insulator (SOI) Structure, it is capable of providing maximum performance while retaining low power consumption. It is available with advanced process technology, narrow feature widths, and two configurations of source and source-gate structures.
The PHKD3NQ10T, 518 has several wide ranging applications. It is well suitable for both consumer and industrial applications including switching, controlling, measurement, and signal processing. The PHKD3NQ10T, 518 is great for use in circuits that require high speed switching and low gate-to-source capacitance. It is ideal for use in design systems that require a high degree of functionality but have limited space and power resources. Examples of end products that use the PHKD3NQ10T, 518 include tablets, laptops, phones, TVs, music players and handheld gaming consoles.
The working principle of the PHKD3NQ10T, 518 is based on a voltage controlled field effect transistor. By controlling the voltage applied to the gate, the current will be modulated by the output between the source and drain. This allows the PHKD3NQ10T, 518 to offer the best performance while offering lower power consumption. It is also capable of supporting higher frequencies with higher device densities per strip. This makes the PHKD3NQ10T, 518 an ideal choice for analog applications that require maximum performance for both precision and fast processing.
The PHKD3NQ10T, 518 is designed to be a highly robust and reliable device with a long life expectancy. This is thanks to its high-temperature operation and current limit protection. It also offers high immunity against electrical noise and distortion as well as protection against ESD, hot carrier injection, and current collapse. This allows the PHKD3NQ10T, 518 to provide reliable operation over a long period of time, ensuring the best performance without sacrificing power efficiency.
The PHKD3NQ10T, 518 is a versatile and reliable device that offers a range of applications in nearly all sectors of the electronics industry. With its ability to offer superior performance and low power consumption, the PHKD3NQ10T, 518 is a great choice for engineers looking to create innovative solutions on a budget. Furthermore, its long life expectancy and high immunity protection allow it to be a reliable option for many design systems.
The specific data is subject to PDF, and the above content is for reference
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