Transistors - FETs, MOSFETs - Arrays

The PHKD13N03LT, 518 is a type of field-effect transistor (FET) array. It includes three highly integrated monolithic transistor arrays that provide built-in protection against thermal overloading and device mismatch, making it a suitable choice for power-management applications. The PHKD13N03LT, 518 also offers low RDS(ON) performance, as well as excellent on-resistance matching and increased power output.

Characteristics and Benefits

The PHKD13N03LT, 518 offers a few characteristics and benefits which make it an attractive choice for power-management applications. These include:

• Low input capacitance (6 pF typical)
• Low on-resistance (129 mΩ typical)
• Excellent thermal-overload protection
• Excellent device mismatch protection
• High power output (1.96 W typical)
• High current capability (2 A typical)

Applications

The PHKD13N03LT, 518 is suitable for a number of power-management applications, including:

• GPS signal reception
• Wireless communication
• Battery management
• Touch panel interfaces
• DC/DC converters
• LED lighting

Working Principle

The PHKD13N03LT, 518 is a field-effect transistor array, with three fully integrated monolithic transistor arrays. The three transistors in the array are connected in a standard source-gate-drain configuration and are designed to act as an on/off switch. When the gate of the transistor is turned on, the current flows between the source and the drain, thereby providing a controllable current path. By adjusting the gate voltage, the current flow can be controlled.

In addition to the three transistors, the PHKD13N03LT, 518 also includes an integrated thermal-overload protection device which ensures reliable operation in the event of thermal overloads. The device also includes device mismatch protection, which helps to ensure that all three transistors are delivering the same performance.