PN2222A_J61Z

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	625mW
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	PN2222

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PN2222A_J61ZPN2222A_J61Z is a type of bipolar junction transistor (BJT) specifically used for various applications in the electronic industry. It is a single, NPN transistor that is commonly used in amplifier circuits and other electronic devices with similar requirements. The PN2222A_J61Z features a power capability of about 450mW and an Omega 2a of about 2.2A. It also has an adequate voltage of about 40V, making it ideal for boosting amplifier performance.The PN2222A_J61Z is a general-purpose medium-power transistor that is ideal for use in inverters and switching circuits. It is usually used in audio applications, including amplifiers, radios and television receivers. It is also used in low-power switching circuits, where its low voltage and current capabilities aid in avoiding unwanted current leakage and power dissipations.The PN2222A_J61Z is widely used in applications that require low to medium-power capabilities, such as battery-operated devices, temperature controllers and voltage regulators. The BJT\'s low voltage and power capabilities help to limit current draw from the source, thus aiding in preserving battery life and reducing cost. In addition, due to its small physical size, the PN2222A_J61Z can be antistatic-protected, protecting against static electricity.The PN2222A_J61Z features a high current gain of about 250, which makes it ideal for use in applications with high voltage drops. Its minimal on-state resistance also makes it a good choice for voltage boost and current-regulating applications.The PN2222A_J61Z\'s working principle is based on the concept of BJTs, which enable current flowing through a base region to control current flowing through a collector-emitter region. The base region is constituted of a semiconductor layer that contains the charge carriers responsible for the transistor\'s switching action.The transistor is powered by a voltage applied to the base-emitter junction, while the collector and emitter terminals provide feedback on the base current. Different operating modes are possible based on the feedback loop arrangement, including common emitter, common base, and emitter follower. The emitter follower mode is used to support higher load currents, lower saturation voltage, and faster switching times.The PN2222A_J61Z is an excellent choice for applications requiring medium power capabilities and excellent switching features. It is a cost-efficient and reliable component for various electronic applications, and its relatively small size allows it to be used in places where space is an issue. Consequently, the PN2222A_J61Z is one of the most widely used electronic components in the electronic industry.

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