PN2222ANLBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	625mW
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	PN2222

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

PN2222ANLBU is a bipolar junction transistor (BJT), which is commonly used in a variety of circuits. It is a small signal NPN transistor and will handle up to 800 mA of collector current and may be employed for low-power, medium current, and medium voltage general purpose applications. This transistor features a high gain, low noise, and a low saturation voltage, among other characteristics.

Application Field

The primary application field of the PN2222ANLBU is amplifying lower currents and signals. It is used to switch on and off a variety of applications, including DC signals and other low-power circuits. This transistor is suitable for use in a range of electronic circuits, such as remote controls, audio systems, frequency converters, amplifiers, power supplies, and others. Additionally, it is used as a switch in logic circuits.In particular, this transistor can be used in circuits requiring very low base current, such as switching power supplies, voltage regulators, or AC motor starters. It is also well suited for use as a cascode transistor in high current driver applications.

Working Principle

The PN2222ANLBU is a three-element transistor featuring an NPN construction. It uses two P-doped silicon junctions connected to an N-doped collector. When the transistor’s base is biased, the transistor starts to conduct current from its emitter to its collector. The transistor’s gain is determined by the relative sizes of its collector and base regions, which determines the current amplification factor. The base current, collector current, and junction voltage between the emitter and collector are affected by the applied bias. When the voltage across the emitter and collector exceeds the saturation voltage, the transistor stops conducting current.

Conclusion

In conclusion, the PN2222ANLBU is a small signal NPN bipolar junction transistor utilized in a range of medium current and medium voltage general purpose applications. It is used to amplify small currents and signals, switch on and off various circuits and DC signals, and as a switch in logic circuits. The transistor featurea a high gain, low noise, and low saturation voltage. It utilizes an NPN construction in which the transistor starts to conduct current when the base is biased, with its gain and other characteristics affected by the applied bias.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description