| Allicdata Part #: | PN2222A,126-ND |
| Manufacturer Part#: |
PN2222A,126 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | TRANS NPN 40V 0.6A TO92 |
| More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 500m... |
| DataSheet: | PN2222A,126 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 600mA |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
| Power - Max: | 500mW |
| Frequency - Transition: | 300MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | PN2222A |
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The PN2222A,126 is a type of transistor commonly referred to as a bipolar junction transistor, or BJT. A BJT is a type of solid-state electronic device constructed with multiple layers of semiconductor material, which can be used to amplify weak signals or switch electrical power. The PN2222A,126 is a member of the single-transistor family, and as a single-transistor device, it has two terminals connected to two layers of semiconductor material. The two layers of semiconductor material are known as the base and the collector contacts. The most important part of a BJT is the junction separating the two layers of semiconductor material, which is known as the base-collector junction.
The PN2222A,126 has a gain factor, or hFE (which stands for “high frequency effect”), of 100 to 300. The hFE is a measure of the amount of current that is able to travel through the transistor’s base region when a certain amount of current flows through its collector region. For instance, if one milliamp of current flows through the collector region, then up to 300 milliamps of current can flow through the base region, resulting in an amplification of the initial current by 300 times. This factor makes the PN2222A,126 suitable for many applications, ranging from amplifying weak signals to switching electrical power.
The working principle of the PN2222A,126 is based on the fundamental principles of electrical engineering. In an un-biased condition, electric current will flow from the collector region to the base region through the base-collector junction. When a positive voltage is applied to the base terminal, it causes an increase in the current flowing through the base region. This increased current in turn causes the electric charge carriers in the base region to be repelled towards the collector region, allowing more current to flow through the base-collector junction. This increased current then amplifies the input signal, creating an output signal.
The PN2222A,126 can be used in a variety of applications, from low-power amplifiers to switching power supplies. It is commonly used in consumer electronics to amplify weak radio signals, power computer peripherals, and control the operation of switches and relays. This type of transistor has also been used in industrial applications, such as controlling the power to motors, motors, and other vital machines.
In conclusion, the PN2222A,126 is a single-transistor device that is commonly used in consumer electronics and industrial applications. With a gain factor from 100 to 300, it is capable of amplifying weak signals or switching electrical power. It is based on the fundamental principles of electrical engineering and its working principle involves the flow of current through the base region and the base-collector junction.
The specific data is subject to PDF, and the above content is for reference
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PN2222A,126 Datasheet/PDF