Allicdata Part #: | PN2222A-APTB-ND |
Manufacturer Part#: |
PN2222A-AP |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | TRANS NPN 40V 0.6A TO92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625m... |
DataSheet: | PN2222A-AP Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.01746 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92 |
Base Part Number: | PN2222A |
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PN2222A-AP is a type of bipolar junction transistor (BJT). It is a three terminal device classified as a NPN silicon transistor, most commonly used for low power amplification and switching applications. This transistor is extremely versatile as it can be used for a wide range of applications in commercial, industrial, and home electronics.
The PN2222A-AP is capable of handling 500mW of power, making it ideal for simple amplification and switching circuits. Its high current and voltage gain enables it to be very useful in a variety of designs within a wide range of operating conditions. The device is housed in a TO-92 package, making it ideal for small and compact circuits.
The PN2222A-AP is a bipolar transistor, meaning it is composed of two P-type (positive) and N-type (negative) regions of semiconductor material separated by a thin insulating layer. When the two regions are electrically connected, the resulting three layer structure acts as a transistor. The two base terminals are connected to the N-type region, and the collector and emitter are connected to the P-type region. When a small current is applied through the base, the transistor acts as an amplifier and produces a current from the collector to the emitter.
The PN2222A-AP has a current gain of 100, which means that for every unit of increase in base current, there will be a 100-fold increase in collector current. This makes it a very efficient amplifier. The device also has a breakdown voltage of 50V, meaning it can withstand up to 50V of reverse voltage without damage. This makes it ideal for use in high voltage applications.
The PN2222A-AP is ideal for low power amplification and switching applications. It can be used in a wide range of circuits, including amplifiers, timers, and analog switches. It is also capable of operating at a wide range of temperatures, making it ideal for use in harsh environments. It is also resistant to light, meaning it can be used in outdoor applications.
In summary, the PN2222A-AP is a NPN silicon bipolar transistor that is most commonly used for low power amplification and switching applications. It is capable of handling 500mW of power, has a current gain of 100, and can withstand up to 50V of reverse voltage without damage, making it ideal for use in high voltage circuits. The device is housed in a TO-92 package, and is capable of operating at a wide range of temperatures, making it ideal for use in harsh environments. Ideal applications for this transistor include amplifiers, timers, analog switches, and outdoor applications.
The specific data is subject to PDF, and the above content is for reference
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