PN2222ARLRA Allicdata Electronics
Allicdata Part #:

PN2222ARLRAOSCT-ND

Manufacturer Part#:

PN2222ARLRA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.6A TO92
More Detail: Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625m...
DataSheet: PN2222ARLRA datasheetPN2222ARLRA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PN2222A
Description

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The PN2222ARLRA is a bipolar junction transistor (BJT) specifically designed for general-purpose switching and amplification. It is a small signal, NPN transistor in a TO-92 package featuring low power consumption due to its high current gain, low noise, and wide operating temperature range. This makes it a perfect choice for a range of applications such as interface circuits, communication circuits, radio-frequency amplifiers, logic circuits, and many more.

The PN2222ARLRA is a single transistor, meaning it consists of three layers of semiconductor material. It has two regions between which a small electric current is passed to control a larger electric current flow. It contains two p-type and one n-type semiconductor materials, creating a base, collector, and emitter. The base is the control element, which is controlled by the voltage or current applied to the base control channel; this determines whether the transistor is in the on or off state. The collector is the output terminal and the emitter is the input terminal. When the base-emitter junction is held in an active state, the collector current exponentially increases, as the collector voltage decreases, making the transistor highly efficient.

The PN2222ARLRA offers a low-power consumption of ceramic-protected leads and a relatively low noise level of 2.5 dB. It has a high current gain of up to 800, meaning it is capable of providing large amounts of current with a small input current. It operates over a wide temperature range from -35°C to +85°C and has a maximum power dissipation of 500 mW. It also has a high breakdown voltage of 50V.

As mentioned earlier, thePN2222ARLRA is most widely used for general purpose switching and amplification applications. It is often used in audio amplifiers, radio-frequency amplifiers, digital-to-analog converters, motor control circuits, and power amplifiers. Due to its high current gain and low noise level, it can also be used in applications such as communication circuits, interface circuits, logic control circuits, and more.

In conclusion, the PN2222ARLRA is a low-power, low-noise, medium-power transistor designed for general purpose switching and amplifying applications. It offers a wide temperature range, high current gain and a high breakdown voltage all at an affordable price. Due to its versatility, it is widely used in a variety of applications ranging from audio amplifiers to communication circuits and logic control circuits.

The specific data is subject to PDF, and the above content is for reference

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