PN3563_D26Z Allicdata Electronics
Allicdata Part #:

PN3563_D26Z-ND

Manufacturer Part#:

PN3563_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS RF NPN 15V 50MA TO-92
More Detail: RF Transistor NPN 15V 50mA 1.5GHz 350mW Through Ho...
DataSheet: PN3563_D26Z datasheetPN3563_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): --
Gain: 14dB ~ 26dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N3563
Description

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PN3563_D26Z transistors are used as versatile radio frequency amplifiers (RF) in many electronic applications, such as radio receivers, television amplifiers, and other audio equipment. It is considered one of the most suitable amplifiers for use in a variety of designs. The transistor has an exceptionally high current gain, making it very capable of amplifying signals from weak sources.

PN3563_D26Z transistors feature an NPN-type package that makes them ideal for use in a wide range of applications. As such, this type of transistor is commonly used in low-voltage, low-power amplifier designs. This helps to make it possible to design systems with a low power consumption. The device also has an adjustable base-to-emitter voltage rating, allowing for better optimization of the application in which it is used.

The working principle of the PN3563_D26Z hinges on the conductivity of charge carriers, which must be present to produce a current. The transistor works by controlling the number of carriers crossing through the base to emitter junction. This junction is the active region of the transistor, and when a current is applied, the carriers move from the emitter and enter the base, creating a potential difference in the transistor. As the base current increases, so too does the emitter current and the transistor is said to be in its active region.

In order to operate in its active region, the transistor must receive a large enough base current to saturate the junction and produce a large enough output current. A base current of around 0.1mA is usually sufficient for this, and is usually the amount of current required to achieve the required gain. However, to optimize gain, frequency response and distortion, this current must be carefully adjusted per the particular application.

As mentioned, PN3563_D26Z transistors are highly suitable for use in a number of applications. One such application is as a voltage amplifier for small signal amplifiers across a wide range of frequencies, including VHF and UHF, and with a maximum frequency response of up to 100MHz. Its high current gain makes it well suited to these applications, and, depending upon the design, it can be used to provide gains of up to 40dB.

These transistors are also often used in common source amplifiers, where their NPN-type construction allows for significant current gain. With a gain of around 50dB, the transistors are capable of amplifying signals from medium frequency sources, such as FM radios and television receivers. Overall, PN3563_D26Z transistors offer an excellent solution for a variety of amplifier applications, and are well suited to radio frequency (RF) applications.

The specific data is subject to PDF, and the above content is for reference

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