PN3567_D26Z Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 15mA, 150mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 1V
Power - Max:	625mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3

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PN3567_D26Z Application Field and Working Principle

Transistors, especially Bipolar Junction Transistors (BJTs) are essential components of modern electronics. Single BJTs are critical components in logic gates, amplifiers and other circuit operation, and a wide range of applications from basic switching applications to complex logic operation. They are among the most reliable, cost-effective and robust components for circuit integration.The PN3567_D26Z is a type of single BJT, specifically used in low-noise amplifiers and switching applications. This single BJT is a NPN type of transistor and is made of silicon material. PN3567_D26Z has a low saturation voltage, a wide safe operating area and a high input resistance. It also has a higher gain and wider application range than conventional transistors.The main function of a BJT is as a three-port active device, where one port serves as the input and two other ports as the output. It can be used as an amplifier, switch, driver or detector. It is usually made up of three layers: the emitter, base and collector. The operating principle of the PN3567_D26Z can be explained simply in the following manner.The base of the PN3567_D26Z is divided into two sections, the collector and the emitter. When an external voltage is applied to the base of the device, an electric current flows from the collector to the emitter. This current flow triggers the "on" state of the transistor and allows the electric current to then flow from the emitter to the collector. The voltage and current electrical field produced by this process is referred to as the "transistor action".When the transistor is "on", the current flows from the base to the collector and can be tailored according to the needs of the circuit. The voltage drop caused by the transistor is determined by the internal resistance (referred to as "beta") between the collector and the base. As current flows through the transistor, the voltage drop between the collector and the base increases. This increases the voltage drop across the transistor and allows the current to flow through the device.Due to its low saturation voltage, wide safe operating area and low runoff, PN3567_D26Z is suitable for use in a variety of applications. It has been used to implement low-noise pre-amplification stages and other circuits requiring high input currents. For switching applications, its low saturation voltage helps minimize power dissipation while its high input resistance ensures quick response to input signals.Despite its relatively small size, the PN3567_D26Z provides a wide range of functions for all types of circuits. Its small size makes it ideal for use in portable and wearable technology, along with its long life, low maintenance, and relatively low cost. Its wide safe operating area also makes it suitable for use high current and voltage environments.Overall, PN3567_D26Z is an ideal single BJT for a wide range of circuit operations. Its high input resistance, low saturation voltage and wide safe operating area allow for accurate and reliable operation, even under harsh conditions. Its small size and low cost make it ideal for use in portable and wearable technology and its long life, low maintenance and relatively low cost make it a cost-effective solution for circuit integration.

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