PN3568_D75Z Discrete Semiconductor Products |
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Allicdata Part #: | PN3568_D75Z-ND |
Manufacturer Part#: |
PN3568_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 1A 625mW Through... |
DataSheet: | PN3568_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 15mA, 150mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PN3568 |
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The PN3568_D75Z is a transistor classified into Transistors - Bipolar (BJT) - Single. It is a type of semiconductor electronic component capable of amplifying or switching electronic signals or electrical power. This article discusses its application field and working principle.
Application field of the PN3568_D75Z
The PN3568_D75Z is mainly used as an amplifier in many applications such as commercial audio and video equipment, medical equipment, computer-related IT and consumer electronics. It is especially suitable for occasions with extreme temperature thresholds, because of its high gain linearity and low noise. This transistor can also be used for audio pre-amplification, voltage amplification, signal conversion, oscillator, waveform shaping, active filtering, and many other applications.
Working principle of the PN3568_D75Z
The PN3568_D75Z is composed of three regions of semiconductor material, each region carrying a different type of semiconductor charge, positive, negative or zero charge. The charge on each region can cause a current to flow between two terminals of the transistor, controlled by the voltage applied across the third terminal.
The working principle of the PN3568_D75Z is based on the concept of electron mobility and potential barriers. Electron mobility is the measure of the ability of electrons to move in a semiconductor. Potential barriers are formed by the bandgap of the material. When a voltage is applied across the base-emitter junction, the forward biased junction creates electron holes in the region between the regions. The electrons move from the n-region (negative region) to the p-region (positive region) via the holes, creating a current from the collector to the emitter.
The PN3568_D75Z is a current-controlled device. When a voltage is applied to the base of the transistor, it will cause a proportional current to flow from the emitter to the collector. An increase in the current at the emitter causes an increase in the current at the collector. The PN3568_D75Z can be used as an amplifier or an oscillator.
The PN3568_D75Z is an excellent choice for many applications. Its high gain linearity and low noise allows it to be used in extreme temperature thresholds. It can be used as an amplifier in audio and video applications, as well as signal conversion or waveform shaping. Its current-controlled design makes it ideal for use in oscillators and active filtering.
The specific data is subject to PDF, and the above content is for reference
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