PN3563_D74Z

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	1.5GHz
Noise Figure (dB Typ @ f):	--
Gain:	14dB ~ 26dB
Power - Max:	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 8mA, 10V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N3563

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PN3563_D74Z Application Field and Working Principle

The PN3563_D74Z is a high performance bipolar junction transistor (BJT) designed for RF applications. It is fabricated using a planar epitaxial silicon process for improved power and gain flatness, higher stability and enhanced reliability. This device also features excellent thermal isolation, which allows it to operate at high collect-emitter voltages without any adverse effect on performance.The PN3563_D74Z is primarily used for general-purpose RF applications such as linear amplifiers, broadband and band pass amplifiers, preamplifiers, and oscillator circuits. It is well suited for a wide range of applications, including low-noise receiver amplifiers, signal processing applications, power amplifiers, switching circuits, and high-frequency oscillators.The PN3563_D74Z is designed to provide high gain and power output while maintaining linear operation over a range of frequencies. Its high power output make it ideally suited for use in high power amplifiers, while its linear performance makes it ideal for broadband amplifier designs. Its excellent thermal isolation helps to ensure that the device operates reliably even in high power applications.The PN3563_D74Z has an anode to base voltage range of 12V to 30V and a collector to emitter voltage range of 40V to 50V. The device has a collector to base breakdown voltage of 70V and anode to base capacitance of 17pF. It is rated for a maximum collector power dissipation of 120mW and maximum collector current of 10mA.The PN3563_D74Z is a current controlled device. It operates on the principle of controlling current between the collector and emitter by applying voltage between the base and emitter. The gain of the device is determined by the ratio of the base current to the collector current. The gain of the PN3563_D74Z is typically greater than 200.The PN3563_D74Z is well suited for a wide range of applications, including low-noise receiver amplifiers, signal processing applications, power amplifiers, switching circuits, and high-frequency oscillators. Its excellent thermal isolation makes it suitable for use in high power applications, while its linear performance makes it ideal for broadband amplifier designs. Its high gain and power output make it ideal for use in linear amplifiers and broadband and band pass amplifiers.In conclusion, the PN3563_D74Z is an excellent high performance bipolar junction transistor for RF applications. It is well suited for a wide range of applications, including low-noise receiver amplifiers, signal processing applications, power amplifiers, switching circuits, and high-frequency oscillators. Its excellent thermal isolation allows it to operate reliably even in high power applications, while its high gain and power output make it ideal for use in linear amplifiers and broadband and band pass amplifiers.

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