PN3638A_D26Z Discrete Semiconductor Products |
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Allicdata Part #: | PN3638A_D26Z-ND |
Manufacturer Part#: |
PN3638A_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 25V 0.8A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 25V 800mA 625mW Thro... |
DataSheet: | PN3638A_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 35nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 300mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PN3638A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Bipolar junction transistors, or BJTs, are electronic components that are used to multiply an electric current or provide amplification of a weak electric signal. The PN3638A_D26Z is a single bipolar junction transistor, also called a single transistor, that is well suited for many types of audio and power applications. This article will describe the application fields of the PN3638A_D26Z, as well as its working principle.
The PN3638A_D26Z is a popular choice for audio amplifier applications due to its low noise output. It is also used for power applications such as DC/DC converters, switch-mode power supplies, and DC-to-AC converters. It is a PNP-style transistor and is designed to handle up to 10A of current when operating at 25 degrees Celsius. It also has a very low voltage drop at a given power level and a wide operating temperature range. The PN3638A_D26Z also has a low saturation voltage, which means that it can efficiently amplify low-level signals.
The working principle of the PN3638A_D26Z is based on the bipolar junction transistor theory. This theory states that when current flows through a P-type semiconductor material and an N-type semiconductor material, separated by a junction, an amplified electrical current is produced in the two N-type region where the base and collector are located. When the current through the base is increased, the collector current also increases, resulting in an amplified current. The current that is amplified is determined by the ratio of the currents of the input and output circuits. This ratio is called the current gain of the transistor.
The PN3638A_D26Z has an hFE rating of 120, which means that the current gain can be as high as 120. This makes the transistor an ideal choice for audio amplifier and power applications, since it can deliver high levels of current over a wide range of input signals. It also has a series resistance of 0.2 ohms, which makes it resistant to voltage spikes and other forms of noise.
In summary, the PN3638A_D26Z is a single bipolar junction transistor that is optimized for power and audio amplifier applications. It has an hFE rating of 120, meaning that it can provide an amplified output current over a wide range of input signals. Its wide operating temperature range and low voltage drop make it ideal for DC/DC converters, switch-mode supplies, and other power applications. In addition, it has a series resistance of 0.2 ohms, which makes it resistant to voltage surges and noise.
The specific data is subject to PDF, and the above content is for reference
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