PN3638A_D74Z Allicdata Electronics

PN3638A_D74Z Discrete Semiconductor Products

Allicdata Part #:

PN3638A_D74Z-ND

Manufacturer Part#:

PN3638A_D74Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor PNP 25V 800mA 625mW Thro...
DataSheet: PN3638A_D74Z datasheetPN3638A_D74Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PN3638A
Description

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The PN3638A_D74Z is a transistor that belongs to the family of Bipolar (BJT) Single devices. It is an NPN type device designed for use in a wide range of application fields, and it is built in such a way that it has an optimized performance and a high durability, even under challenging conditions. It is particularly suited for applications requiring fast switching speeds and linear amplification. It can also be used in communications, power switching, and power-supply solutions.

The PN3638A_D74Z is a low voltage and low power device, designed to handle current ratings of up to 150 mA. Its collector-emitter voltage rating is 35 V, and its maximum power dissipation is 625 mW. It has a minimum operating temperature of -55°C and a maximum operating temperature of +150°C. It has good gain linearity and high switching speed. It is available in both through-hole and surface-mount packages, making it suitable for a wide range of assembly techniques.

The working principle behind the PN3638A_D74Z is fairly simple. When a small current is provided at the base terminal, the current is amplified by the transistor, and the output current at the collector terminal is greater than the current at the base terminal. This is known as current amplification, and is the main feature of a bipolar transistor. The base current is known as the “input” current, while the collector current is known as the “output” current. The amplification factor is known as the “gain” of the transistor.

The base-emitter voltage of the PN3638A_D74Z is around 0.8 V, which helps to reduce the quiescent current consumption, and allows for faster switching speeds. The typical current gain of the PN3638A_D74Z is around 255, which means that a relatively small base current can be amplified to a large collector current. This feature makes it an ideal choice for use in power switching and power-supply solutions.

The PN3638A_D74Z is a robust and reliable device, and it is capable of providing reliable performance in a wide range of applications. It is optimized for fast switching speeds and linear amplification, making it a great choice for applications such as communications and power-supply solutions. Its low power consumption and its ability to handle high current make it a very versatile option. The device is widely available in both through-hole and surface-mount packages, making it suitable for various assembly techniques. In summary, the PN3638A_D74Z is a great choice for a wide range of application fields.

The specific data is subject to PDF, and the above content is for reference

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