Allicdata Part #: | PN3640-ND |
Manufacturer Part#: |
PN3640 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 12V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 12V 200mA 500MHz 350m... |
DataSheet: | PN3640 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 300mV |
Power - Max: | 350mW |
Frequency - Transition: | 500MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PN3640 |
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PN3640 is a highly reliable, high-efficiency transistor designed to operate as an amplifier or switch in power control applications. It is widely used in industrial and consumer electronics applications where power control, linearity control and low power dissipation are critical. The PN3640 is part of a family of transistors known as single-base bipolar junction transistors (BJT). Single-base BJTs are composed of two p-layer semiconductor regions separated by an n-layer. This specific device is a NPN-type BJT with a voltage current gain of 40 and a maximum collector current rating of 10A.
The basic biasing and operation of the PN3640 can be compared to that of a simpler common-collector configuration. The majority of the current flows through the collector of the transistor and is diverted to either a separate load or to ground. In order to produce the biasing conditions for amplification, an external voltage source is applied between the base and the emitter. The amount of current which will flow through the transistor for a given voltage is governed by the gain, or hfe, of the device. In the PN 3640 the hfe rating is 40.
The functional principle of the PN3640 BJT is based on the principles of the PN3640. By increasing the input voltage applied to the base of the device, the amount of current which will flow through the transistor and towards the load is increased. Conversely, as the voltage applied to the base is reduced, less current will flow through the transistor. This effect is caused by the transistor\'s ability to convert a small input voltage into a corresponding large output current. The PN3640 is particularly attractive because of its ability to operate with low power dissipation.
The PN3640 is suitable for a wide range of applications, including telecommunications, automotive electronics, industrial controllers, security systems, medical equipment and consumer electronics. Due to its low power consumption, high efficiency and excellent linearity performance, the PN3640 has become a popular choice for power control circuits. It also has found significant use in automotive applications, where the small size and low voltage operations have made the device well-suited for a variety of power management applications.
In summary, the PN3640 is a versatile, efficient and reliable transistor designed for use in power control applications. It features a voltage-current gain of 40, a maximum collector current rating of 10A, excellent linearity performance and low power dissipation. The device is suitable for a wide range of applications, including telecommunications, automotive electronics, industrial controllers, security systems, medical equipment and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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