PN3646_D26Z Allicdata Electronics
Allicdata Part #:

PN3646_D26Z-ND

Manufacturer Part#:

PN3646_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 15V 0.3A TO-92
More Detail: Bipolar (BJT) Transistor NPN 15V 300mA 350mW Thro...
DataSheet: PN3646_D26Z datasheetPN3646_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 3mA, 300mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
Power - Max: 350mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PN3646
Description

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Transistors are key elements that find application in many electronic circuits. The particular device under examination here is the PN3646_D26Z, which falls under the category of single bipolar junction transistors (BJT). These are three-terminal devices that are available in two basic structures: a NPN and a PNP. The NPN configuration is a majority carrier device in which the current flows mainly through the emitter-base junction, while the PNP is a minority carrier device in which the carriers flow through the Collector-Base junction. The PN3646_D26Z is a NPN-type BJT.

The PN3646_D26Z is designed to provide high-current capabilities and high input impedance, making it ideal for power applications. Its main advantage lies in its ability to provide large increases in current gain to small amounts of base current, resulting in high gain-bandwidth and low frequency response. An important feature of this type of BJT is its ability to operate in linear and saturation modes. In linear mode, current gain is nearly constant. In saturation mode, the device is able to increase current gain as the base current increases, allowing for adjustable gains if current is not known.

The PN3646_D26Z is a low-noise, low-cost BJT commonly used in a variety of power applications such as DC-DC converters, efficiency enhancers, voltage and current regulators, and switching power supplies. It is also suitable for use as a variable power switch or amplifier in telecommunications and networking, as well as in audio and video applications. Its simple, three-terminal configuration is easy to use, and it also offers high-output resistance to minimize energy losses.

The working principle of the PN3646_D26Z is based on the theory of semiconductor junction formation. The device contains two similar semiconductor materials, one positively charged and the other negatively charged. These two materials, when juxtaposed, form a junction. When a voltage is applied across the junction, it results in a flow of minority carriers, thus completing a circuit. The voltage of the base terminal determines the magnitude of current gain, as it acts as an “on” switch. This increases the speed at which the device operates.

When the base terminal of the PN3646_D26Z is connected to the collector terminal, a current between collector and emitter terminals is controlled. This current flow then determines the current gain of the device, which is the ratio between collector current to emitter current. The current gain of the PN3646_D26Z is typically in the range of 160 to 190.

The PN3646_D26Z is a rugged, reliable and versatile bipolar junction transistor. It is an ideal choice for a wide range of power applications, including DC-DC converters, switching power supplies, efficiency enhancers and voltage and current regulators. It is easy to use, cost-effective and offers a large number of advantages, making it a popular choice among designers and engineers.

The specific data is subject to PDF, and the above content is for reference

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