PN4416_D27Z

The PN4416_D27Z is a type of Field Effect Transistor (FET) specifically designed for radio frequency (RF) applications. It is commonly used in the amplifier stage of RF circuits and is known for its high linearity and low noise performance. This makes it an ideal choice for such applications as low-noise block downconverters (LNB) used in satellite television systems and mobile phone base station receivers. The PN4416_D27Z is a N-channel enhancement mode MOSFET, which uses Gate Voltage (VGS) to control the current flow, much like a rheostat. The FET’s Gate terminal is a capacitor-coupled input, meaning that an AC signal is used to control current flow between the Source and Drain terminals. The characteristic curves of the PN4416_D27Z show that it is a current-controlled, linear-mode device, meaning that the drain current (ID) is directly proportional to the voltage applied to the Gate terminal (VGS). The Gate dipole (dg) can be adjusted to control the linearity of the device and improve signal fidelity. The PN4416_D27Z is suitable for use in many RF and microwave applications, including amplifiers, mixers, oscillators, signal sources and receivers, power amplifiers, and other services. It is particularly well-suited to low noise environments, where the low noise performance of the device is critical. Additionally, it has very low power consumption levels, making it ideal for applications that require long operation time. The PN4416_D27Z is a highly versatile device that can be configured to suit a variety of different requirements. In particular, it is capable of operating over a wide range of frequencies, from as low as 20 MHz up to an impressive 5 GHz. Furthermore, it features a wide temperature range (0°C to 85°C), making it suitable for a large range of applications. The device is also designed with a wide range of voltage options, from 0.8V to 10V, allowing it to be used in a wide range of designs. Additionally, it has high input impedance, allowing it to be easily matched to various circuit requirements. Finally, the PN4416_D27Z has low input and output capacitance values, allowing for its use in high-frequency switching applications. In conclusion, the PN4416_D27Z is a highly versatile FET designed specifically for RF applications. Its linearity, low noise performance, wide frequency range, and voltage and temperature ranges make it a good choice for a variety of applications. Its low input and output capacitance values make it an ideal candidate for high-frequency switching applications.

PN4416	ON Semicondu...	0.0 $	1000	JFET N-CH 30V TO92RF Mosf...
PN4416_D27Z	ON Semicondu...	0.0 $	1000	JFET N-CH 30V TO92RF Mosf...